Low on state resistance vertical DMOS FET DIODES ZVN3306FTA N channel transistor with 60 volts rating
Key Attributes
Model Number:
ZVN3306FTA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150mA
Operating Temperature -:
-
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
330mW
Gate Charge(Qg):
-
Mfr. Part #:
ZVN3306FTA
Package:
SOT-23
Product Description
Product Overview
The ZVN3306F is an N-channel enhancement mode vertical DMOS FET designed for general-purpose applications. This device offers a low on-state resistance (RDS(on) of 5) and a drain-source voltage (VDS) rating of 60 Volts. It is suitable for applications requiring efficient switching and low power dissipation. The complementary P-channel device is the ZVP3306F.
Product Attributes
- Package Type: SOT23
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Technology: Vertical DMOS FET
- Part Marking Detail: MC
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source Voltage | VDS | 60 | V | |
| Continuous Drain Current at Tamb=25C | ID | 150 | mA | |
| Pulsed Drain Current | IDM | 3 | A | |
| Gate-Source Voltage | VGS | 20 | V | |
| Power Dissipation at Tamb=25C | Ptot | 330 | mW | |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=1mA, VGS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 0.8 - 2.4 | V | ID=1mA, VDS= VGS |
| Gate-Body Leakage | IGSS | 20 | nA | VGS= 20V, VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | 0.5 - 50 | A | VDS=60V, VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 0.5 - 50 | A | VDS=48V, VGS=0V, T=125C(2) |
| On-State Drain Current | ID(on) | 750 | mA | VDS=18V, VGS=10V (1) |
| Static Drain-Source On-State Resistance | RDS(on) | 5 | VGS=10V, ID=500mA (1) | |
| Forward Transconductance | gfs | 150 | mS | VDS=18V, ID=500mA (1)(2) |
| Input Capacitance | Ciss | 35 | pF | VDS=18V, VGS=0V, f=1MHz (2) |
| Common Source Output Capacitance | Coss | 25 | pF | VDS=18V, VGS=0V, f=1MHz (2) |
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=18V, VGS=0V, f=1MHz (2) |
| Turn-On Delay Time | td(on) | 3 (typ 5) | ns | VDD 18V, ID=500mA (2)(3) |
| Rise Time | tr | 4 (typ 7) | ns | VDD 18V, ID=500mA (2)(3) |
| Turn-Off Delay Time | td(off) | 4 (typ 6) | ns | VDD 18V, ID=500mA (2)(3) |
| Fall Time | tf | 5 (typ 8) | ns | VDD 18V, ID=500mA (2)(3) |
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator.
1809081617_DIODES-ZVN3306FTA_C155310.pdf
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