P Channel Enhancement Mode MOSFET DIODES DMPH4015SPSQ 13 for Automotive Reverse Polarity Protection
Key Attributes
Model Number:
DMPH4015SPSQ-13
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
526pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.036nF
Pd - Power Dissipation:
2.6W
Input Capacitance(Ciss):
4.234nF
Gate Charge(Qg):
91nC@10V
Mfr. Part #:
DMPH4015SPSQ-13
Package:
PowerDI5060-8
Product Description
DMPH4015SPSQ P-Channel Enhancement Mode MOSFET
Product Overview
The DMPH4015SPSQ is a P-channel enhancement mode MOSFET designed to meet stringent automotive application requirements. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. This MOSFET is ideal for reverse-polarity protections, BLDC motor controls, and power-management functions, offering high performance with a rated operating temperature of +175C, making it suitable for high ambient temperature environments. It features 100% Unclamped Inductive Switch (UIS) testing in production, low on-resistance, and fast switching speeds.
Product Attributes
- Brand: Diodes Incorporated
- Product Family: DMPH4015SPSQ
- Package Type: PowerDI5060-8
- Package Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: 100% Matte Tin Annealed over Copper Leadframe
- Certifications: AEC-Q101 Qualified, PPAP Capable, IATF 16949 Certified Facilities
- Environmental Compliance: Lead-Free Finish; RoHS Compliant; Halogen and Antimony Free (Green Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | BVDSS | -40 | V | TC = +25C |
| RDS(ON) Max | 10 | m | VGS = -10V | |
| 14 | m | VGS = -4.5V | ||
| ID Max | -50 | A | TC = +25C | |
| -40 | A | TC = +25C | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -40 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 25 | V | @TA = +25C |
| Continuous Drain Current (VGS = -10V, Steady State, TC = +25C) | ID | -50 | A | Note 7 |
| Continuous Drain Current (VGS = -10V, Steady State, TC = +100C) | ID | -35 | A | Note 7 |
| Continuous Drain Current (VGS = -10V, Steady State, TA = +25C) | ID | -12.0 | A | Note 6 |
| Continuous Drain Current (VGS = -10V, Steady State, TA = +100C) | ID | -9.0 | A | Note 6 |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | -100 | A | @TA = +25C |
| Maximum Body Diode Continuous Current | IS | -50 | A | Note 7 |
| Avalanche Current (L = 1mH) | IAS | -22 | A | @TA = +25C |
| Avalanche Energy (L = 1mH) | EAS | 260 | mJ | @TA = +25C |
| Thermal Characteristics | ||||
| Total Power Dissipation (TA = +25C) | PD | 1.5 | W | Note 5 |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 98 | C/W | Note 5 |
| Total Power Dissipation (TA = +25C) | PD | 2.6 | W | Note 6 |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 57 | C/W | Note 6 |
| Thermal Resistance, Junction to Case (Steady State) | RJC | 0.9 | C/W | Note 7 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -40V, VGS = 0 |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 25V, VDS = 0 |
| Gate Threshold Voltage | VGS(TH) | -1.5 to -2.5 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 8 to 10 | m | VGS = -10V, ID = -9.8A |
| 11 to 14 | m | VGS = -4.5V, ID = -9.8A | ||
| Diode Forward Voltage | VSD | -0.7 to -1 | V | VGS = 0, IS = -1A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 4234 | pF | VDS = -20V, VGS = 0, f = 1MHz |
| Output Capacitance | Coss | 1036 | pF | VDS = -20V, VGS = 0, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 526 | pF | VDS = -20V, VGS = 0, f = 1MHz |
| Gate Resistance | Rg | 7.8 | VDS = 0, VGS = 0, f = 1MHz | |
| Total Gate Charge (VGS = -4.5V) | Qg | 42.7 | nC | VDS = -20V, ID = -9.8A |
| Total Gate Charge (VGS = -10V) | Qg | 91 | nC | VDS = -20V, ID = -9.8A |
| Gate-Source Charge | Qgs | 14.2 | nC | VDS = -20V, ID = -9.8A |
| Gate-Drain Charge | Qgd | 13.5 | nC | VDS = -20V, ID = -9.8A |
| Turn-On Delay Time | tD(ON) | 13.2 | ns | VGS = -10V, VDD = -20V, RG = 6, ID = -1A |
| Turn-On Rise Time | tR | 10 | ns | VGS = -10V, VDD = -20V, RG = 6, ID = -1A |
| Turn-Off Delay Time | tD(OFF) | 303 | ns | VGS = -10V, VDD = -20V, RG = 6, ID = -1A |
| Turn-Off Fall Time | tF | 138 | ns | VGS = -10V, VDD = -20V, RG = 6, ID = -1A |
| Reverse-Recovery Time | tRR | 26 | ns | IF = -9.8A, di/dt = -100A/s |
| Reverse-Recovery Charge | QRR | 20 | nC | IF = -9.8A, di/dt = -100A/s |
| Ordering Information | ||||
| Part Number | Package | Packing | Qty. | Carrier |
| DMPH4015SPSQ | PowerDI5060-8 | Reel | 2500 | |
| DMPH4015SPSQ/SWP (Type UX) | PowerDI5060-8/SWP (Type UX) | Reel | 2500 | |
| Mechanical Data | ||||
| Package Weight | 0.097 | grams (Approximate) | ||
| Pin Configuration | ||||
| Pin 1 | S | Top View | ||
| D | ||||
| D | ||||
| G | ||||
| D | ||||
| D | ||||
| S | ||||
| S | ||||
2412251124_DIODES-DMPH4015SPSQ-13_C5673615.pdf
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