Low RDS ON N Channel Enhancement Mode MOSFET Diodes DMN3008SFG 7 for Power Management Applications
Key Attributes
Model Number:
DMN3008SFG-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
62A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
4.4V@13.5A
Reverse Transfer Capacitance (Crss@Vds):
459pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
3.69nF@10V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
DMN3008SFG-7
Package:
PowerDI3333-8
Product Description
Product Overview
The Diodes Incorporated DMN3008SFG is a 30V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. It excels in minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for backlighting, power management functions, and DC-DC converters, this MOSFET offers a low RDS(ON) for reduced on-state losses and a small, thermally efficient package that enables higher density and smaller end products. It is 100% Unclamped Inductive Switch (UIS) tested in production and is a "Green" device, being totally lead-free, fully RoHS compliant, and halogen and antimony free. Qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Package Type: PowerDI3333-8
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Certifications: Qualified to AEC-Q101 Standards
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (TC = +25C) | ID | 62 | A | Steady State |
| Continuous Drain Current (TC = +70C) | ID | 50 | A | Steady State |
| Continuous Drain Current (TA = +25C) | ID | 17.6 | A | VGS = 10V, Steady State |
| Continuous Drain Current (TA = +70C) | ID | 14.1 | A | VGS = 10V, Steady State |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 150 | A | |
| Maximum Continuous Body Diode Forward Current | IS | 2 | A | Note 6 |
| Avalanche Current (L = 0.1mH) | IAS | 45 | A | |
| Avalanche Energy (L = 0.1mH) | EAS | 101 | mJ | |
| Total Power Dissipation (TA = +25C) | PD | 0.9 | W | Note 5 |
| Total Power Dissipation (TA = +70C) | PD | 0.6 | W | Note 5 |
| Total Power Dissipation (TA = +25C) | PD | 2.1 | W | Note 6 |
| Total Power Dissipation (TA = +70C) | PD | 1.3 | W | Note 6 |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 134 | C/W | Note 5 |
| Thermal Resistance, Junction to Ambient (t < 10s) | RJA | 79 | C/W | Note 5 |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 58 | C/W | Note 6 |
| Thermal Resistance, Junction to Ambient (t < 10s) | RJA | 34 | C/W | Note 6 |
| Thermal Resistance, Junction to Case | RJC | 4.8 | C/W | Note 6 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Gate Threshold Voltage | VGS(TH) | 1 - 2.3 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) | 3.9 - 4.4 | m | ID = 13.5A |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) | 4.6 - 5.5 | m | ID = 13.5A |
| Diode Forward Voltage | VSD | 0.75 - 1.2 | V | VGS = 0V, IS = 1A |
| Input Capacitance | Ciss | 3,690 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Output Capacitance | Coss | 530 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 459 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Gate Resistance | Rg | 0.9 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge (VGS = 4.5V) | Qg | 41 | nC | VDS = 24V, ID = 27A |
| Total Gate Charge (VGS = 10V) | Qg | 86 | nC | |
| Gate-Source Charge | Qgs | 9.2 | nC | |
| Gate-Drain Charge | Qgd | 18.6 | nC | |
| Turn-On Delay Time | tD(ON) | 5.7 | ns | VDD = 15V, VGS = 10V, RL = 1.11, Rg = 4.7, ID = 13.5A |
| Turn-On Rise Time | tR | 14.0 | ns | VDD = 15V, VGS = 10V, RL = 1.11, Rg = 4.7, ID = 13.5A |
| Turn-Off Delay Time | tD(OFF) | 63.7 | ns | VDD = 15V, VGS = 10V, RL = 1.11, Rg = 4.7, ID = 13.5A |
| Turn-Off Fall Time | tF | 28.4 | ns | VDD = 15V, VGS = 10V, RL = 1.11, Rg = 4.7, ID = 13.5A |
| Reverse Recovery Time | tRR | 19.3 | ns | IF=13.5A, di/dt=100A/s |
| Reverse Recovery Charge | QRR | 10.7 | nC | IF=13.5A, di/dt=100A/s |
| Model | Part Number | Package | Packaging | |
| DMN3008SFG | DMN3008SFG-7 | PowerDI3333-8 | 2,000/Tape & Reel | Note 4 |
| DMN3008SFG | DMN3008SFG-13 | PowerDI3333-8 | 3,000/Tape & Reel | Note 4 |
| Package Dimensions (mm) | Min | Max | Typ | |
| A | 0.75 | 0.85 | 0.80 | |
| A1 | 0.00 | 0.05 | 0.02 | |
| A3 | - | - | 0.203 | |
| b | 0.27 | 0.37 | 0.32 | |
| b2 | 0.15 | 0.25 | 0.20 | |
| D | 3.25 | 3.35 | 3.30 | |
| D2 | 2.22 | 2.32 | 2.27 | |
| E | 3.25 | 3.35 | 3.30 | |
| E2 | 1.56 | 1.66 | 1.61 | |
| E3 | 0.79 | 0.89 | 0.84 | |
| E4 | 1.60 | 1.70 | 1.65 | |
| e | - | - | 0.65 | |
| L | 0.35 | 0.45 | 0.40 | |
| L1 | - | - | 0.39 | |
| z | - | - | 0.515 |
1912111437_DIODES-DMN3008SFG-7_C384563.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
