Low RDS ON 60V N channel MOSFET DIODES DMN62D1SFB with ESD protection and fast switching performance
Key Attributes
Model Number:
DMN62D1SFB-7B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
410mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.6pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
80pF@40V
Pd - Power Dissipation:
470mW
Gate Charge(Qg):
1.39nC@10V
Mfr. Part #:
DMN62D1SFB-7B
Package:
X1-DFN1006-3
Product Description
Product Overview
The Diodes Incorporated DMN62D1SFB is a 60V N-channel enhancement mode MOSFET designed for high-efficiency power-management applications. It excels in minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for load switches, portable applications, and general power-management functions, this MOSFET offers an ultra-small surface-mount package with ESD-protected gate, low gate threshold voltage, and fast switching speed.
Product Attributes
- Brand: Diodes Incorporated
- Package Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: NiPdAu over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Qualification: Qualified to JEDEC standards for High Reliability.
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250A | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current @ TA = +25C | ID | 0.41 | A | VGS = 10V | ||
| Continuous Drain Current @ TA = +85C | ID | 0.30 | A | VGS = 10V | ||
| Static Drain-Source On-Resistance @ VGS = 10V | RDS(ON) | 1.40 | ID = 40mA | |||
| Static Drain-Source On-Resistance @ VGS = 4.5V | RDS(ON) | 1.60 | ID = 35mA | |||
| Gate Threshold Voltage | VGS(TH) | 1.3 | 1.6 | 2.3 | V | VDS = VGS, ID = 250A |
| Input Capacitance | Ciss | 40 | 80 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | |
| Output Capacitance | Coss | 3.5 | 7 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | |
| Reverse Transfer Capacitance | Crss | 2.8 | 5.6 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge | Qg | 0.73 | 1.5 | nC | VGS = 4.5V, VDS = 50V, ID = 1A | |
| Total Gate Charge | Qg | 1.39 | 2.8 | nC | VGS = 10V, VDS = 50V, ID = 1A | |
| Power Dissipation | PD | 0.47 | W | @TA = +25C (Note 5) | ||
| Thermal Resistance, Junction to Ambient | RJA | 258 | C/W | @TA = +25C (Note 5) | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | C | ||
| Package Type | X1-DFN1006-3 | |||||
| Package Dimensions (LxW) | 0.95 x 0.60 | 1.00 x 0.60 | 1.075 x 0.675 | mm | ||
| Weight | 0.001 | grams | (Approximate) | |||
| Part Number | DMN62D1SFB-7B | |||||
| Package Marking | NH | |||||
| Reel Size | 7 inches | |||||
| Packing Quantity | 10,000 | Reel |
2412251120_DIODES-DMN62D1SFB-7B_C531164.pdf
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