Fast Switching Schottky Barrier Diode EIC BAT86 with Low Forward Voltage Drop and Enhanced Junction Protection

Key Attributes
Model Number: BAT86
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
5uA@40V
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward(Vf@If):
900mV@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT86
Package:
DO-34
Product Description

Product Overview

The BAT86 is a Schottky barrier diode designed for general purpose applications. It features a low turn-on voltage and is protected by a PN junction guard ring against excessive voltage, including electrostatic discharges. Its low forward voltage drop and fast switching capabilities make it ideal for protecting MOS devices, steering, biasing, and coupling diodes in fast switching and low logic level applications. An alternative version, the BAS86, is available in the MiniMELF case.

Product Attributes

  • Certification: Pb / RoHS Free

Technical Specifications

ParameterSymbolValueUnitTest Condition
Continuous Reverse VoltageVR50V
Continuous Forward CurrentIF200(1)mA
Average forward currentIF(AV)200(1)mATa = 50 C
Repetitive Peak Forward CurrentIFRM500(1)mAtp < 1s
Thermal Resistance Junction to Ambient AirRqJA320(1)/W
Junction TemperatureTJ125C
Ambient Operating Temperature RangeTa-65 to + 125C
Storage temperature rangeTS-65 to + 150C
Reverse Breakdown VoltageV(BR)R50V
Reverse CurrentIR-mAVR = 40 V
0.3
5.0
IR-mAIF = 1mA
0.275
0.380
Forward VoltageVF-VIF = 10mA
0.365
0.450
VF-VPulse Test tp <300ms , d <2%
0.460IF = 30mA
0.600
VF-VIF = 100mA
0.700
0.900
Diode CapacitanceCd-pFVR = 1V, f = 1MHz
8
Reverse Recovery TimeTrr4nsIF =10mA to IR = 10mA , IR = 1mA (pulsed)

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.


2410121947_EIC-BAT86_C5307515.pdf

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