Fast Switching Schottky Barrier Diode EIC BAT86 with Low Forward Voltage Drop and Enhanced Junction Protection
Product Overview
The BAT86 is a Schottky barrier diode designed for general purpose applications. It features a low turn-on voltage and is protected by a PN junction guard ring against excessive voltage, including electrostatic discharges. Its low forward voltage drop and fast switching capabilities make it ideal for protecting MOS devices, steering, biasing, and coupling diodes in fast switching and low logic level applications. An alternative version, the BAS86, is available in the MiniMELF case.
Product Attributes
- Certification: Pb / RoHS Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Continuous Reverse Voltage | VR | 50 | V | |
| Continuous Forward Current | IF | 200(1) | mA | |
| Average forward current | IF(AV) | 200(1) | mA | Ta = 50 C |
| Repetitive Peak Forward Current | IFRM | 500(1) | mA | tp < 1s |
| Thermal Resistance Junction to Ambient Air | RqJA | 320(1) | /W | |
| Junction Temperature | TJ | 125 | C | |
| Ambient Operating Temperature Range | Ta | -65 to + 125 | C | |
| Storage temperature range | TS | -65 to + 150 | C | |
| Reverse Breakdown Voltage | V(BR)R | 50 | V | |
| Reverse Current | IR | - | mA | VR = 40 V |
| 0.3 | ||||
| 5.0 | ||||
| IR | - | mA | IF = 1mA | |
| 0.275 | ||||
| 0.380 | ||||
| Forward Voltage | VF | - | V | IF = 10mA |
| 0.365 | ||||
| 0.450 | ||||
| VF | - | V | Pulse Test tp <300ms , d <2% | |
| 0.460 | IF = 30mA | |||
| 0.600 | ||||
| VF | - | V | IF = 100mA | |
| 0.700 | ||||
| 0.900 | ||||
| Diode Capacitance | Cd | - | pF | VR = 1V, f = 1MHz |
| 8 | ||||
| Reverse Recovery Time | Trr | 4 | ns | IF =10mA to IR = 10mA , IR = 1mA (pulsed) |
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
2410121947_EIC-BAT86_C5307515.pdf
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