sensitive gate triac DIODES T12M5T600B with glass passivated junctions and 600 volts blocking voltage
Key Attributes
Model Number:
T12M5T600B
Product Custom Attributes
Mfr. Part #:
T12M5T600B
Product Description
Product Overview
The T12M5T600B(LS) is a sensitive gate triac, a silicon bidirectional thyristor designed for high-performance applications. It offers a blocking voltage up to 600V and a high surge current capability of 90 Amperes. Featuring glass-passivated junctions for enhanced reliability and uniformity, this triac is operational in three quadrants (Q1, Q2, and Q3). It is RoHS compliant and a "Green" device, free from Halogen and Antimony. The TO-220AB package ensures ease of design and integration.
Product Attributes
- Brand: Diodes Incorporated
- Package: TO-220AB
- Material: Molded Plastic, "Green" Molding Compound
- Color: "Green" (referring to material classification)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak repetitive off-state voltage | VDRM, VRRM | 600 | Volts | (TJ = -40 to +110C, sine wave, 50 to 60Hz; gate open) |
| On-stage RMS current | IT(RMS) | 12 | Amp | (full sine wave 50 to 60Hz, TC = +70C) |
| Peak non-repetitive surge current | ITSM | 90 | Amps | (one full cycle 60Hz, TJ = +25C) |
| Circuit fusing consideration | I2t | 33 | A2s | (t = 8.3ms) |
| Operating junction temperature range | TJ | -40 to +110 | C | |
| Storage temperature range | TSTG | -40 to +150 | C | |
| Peak repetitive forward or reverse blocking current | IDRM, IRRM | 10 (TJ = +25C), 2 (TJ = +110C) | A, mA | (VAK = rated VDRM and VRRM, gate open) |
| Peak forward on-state voltage | VTM | 1.85 | Volts | (ITM = 12A Peak @ tP 2.0ms, duty cycle 2%) |
| Gate trigger current | IGT1, IGT2, IGT3 | 5 | mA | (VD = 12V, RL = 100) |
| Gate trigger voltage | VGT1, VGT2, VGT3 | 1.5 | Volts | (VD = 12V, RL = 100) |
| Latching Current | IL1, IL2, IL3 | 15, 20, 15 | mA | (VD = 12 V, IG = 5 mA) |
| Holding current | IH | 10 | mA | (VD = 12V, initiation current = 200mA, gate open) |
| Critical Rate of Rise of Off-State Voltage | dv/dt | 15 | V/us | (VD = 67% Rated VDRM, Exponential Waveform, gate open, TJ = +110C) |
2412251012_DIODES-T12M5T600B_C17563833.pdf
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