PNP Transistor ElecSuper S8550 in SOT23 Package 300mW Power Dissipation for Electronic Applications
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed as a complementary component to the S8050. It offers a power dissipation of 300mW, ensuring high stability and reliability for various electronic applications. This transistor is suitable for general-purpose use where its specific voltage and current ratings are met.
Product Attributes
- Brand: ElecSuper
- Package Type: SOT-23 Small Outline Plastic Package
- Encapsulation Material: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current-Continuous | IC | -500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55~150 | ||
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | |
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100uA, IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-1mA, IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uA, IC=0 |
| Collector cut-off current | ICEO | -100 | nA | VCE=-20V, IB=0 |
| ICBO | -100 | nA | VCB=-40V, IE=0 | |
| Emitter cut-off current | IEBO | -100 | nA | VEB=-3V, IC=0 |
| DC current gain (hFE1) | hFE1 | 120 - 400 | VCE=-1V, IC=-50mA | |
| DC current gain (hFE2) | hFE2 | 50 | VCE=-1V, IC=-500mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.60 | V | IC=-500mA, IB=-50mA |
| Base-emitter saturation voltage | VBE(sat) | -1.20 | V | IC=-500mA, IB=-50mA |
| Transition frequency | fT | 150 | MHz | VCE=-6V, IC=-20mA, f=30MHz |
| Classification of hFE(1) | ||||
| Rank | Range | |||
| L | 120~200 | |||
| H | 200~350 | |||
| J | 300~400 | |||
| Dimension and Patterns (SOT-23) | ||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||
| A | 0.900 | 1.150 | ||
| A1 | 0.900 | 1.050 | ||
| b | 0.300 | 0.500 | ||
| c | 0.080 | 0.150 | ||
| D | 2.800 | 3.00 | ||
| E | 1.200 | 1.400 | ||
| E1 | 2.250 | 2.550 | ||
| e | 0.950TYP | |||
| e1 | 1.800 | 2.000 | ||
| L | 0.550REF | |||
| L1 | 0.300 | 0.500 | ||
| 0 | 8 | |||
2410121717_ElecSuper-S8550_C5249675.pdf
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