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quality Compact SOT23 package NPN transistor ElecSuper MMBTA42 with 300 volt collector emitter voltage rating factory
quality Compact SOT23 package NPN transistor ElecSuper MMBTA42 with 300 volt collector emitter voltage rating factory

Compact SOT23 package NPN transistor ElecSuper MMBTA42 with 300 volt collector emitter voltage rating

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is a high-performance NPN transistor from ElecSuper, designed for general-purpose applications. It offers a high collector-emitter voltage of 300V and a continuous collector current of 300mA, with a power dissipation of 350mW. This transistor is complementary to the MMBTA92 and is housed in a compact SOT-23 plastic-encapsulate package, ensuring high stability and reliability. Its robust design makes it suitable for various electronic circuits requiring dependable switching and amplification.

Product Attributes

  • Brand: ElecSuper
  • Model: MMBTA42
  • Type: NPN Transistor
  • Encapsulation: SOT-23 Plastic Package
  • Flammability Rating: Epoxy UL: 94V-0
  • Complementary to: MMBTA92

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 300 mA
Collector Power Dissipation PC 350 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 150
Thermal Resistance Junction to Ambient RJA 357 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=10uA, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 250 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain hFE1* VCE=10V, IC=1mA 60
DC current gain hFE2* VCE=10V, IC=10mA 100 200
DC current gain hFE3* VCE=10V, IC=30mA 65
Collector-emitter saturation voltage VCE(sat)* IC=20mA, IB=2mA 0.20 V
Base-emitter saturation voltage VBE(sat)* IC=20mA, IB=2mA 0.90 V
Transition frequency fT VCE=20V, IC=100mA, f=30MHz 50 MHz
*Pulse test: pulse width300us, duty cycle2.0%
6. Dimension and Patterns (SOT-23)
Symbol Dimensions Unit Symbol Dimensions Unit
A 0.900 - 1.150 mm E1 2.250 - 2.550 mm
A1 0.900 - 1.050 mm e 0.950 (TYP) mm
b 0.300 - 0.500 mm e1 1.800 - 2.000 mm
c 0.080 - 0.150 mm L 0.550 (REF) mm
D 2.800 - 3.00 mm L1 0.300 - 0.500 mm
E 1.200 - 1.400 mm 0 - 8
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.

2410121717_ElecSuper-MMBTA42_C5249690.pdf

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