Trench Power LV MOSFET based P Channel Transistor Doeshare DP3407Q for power management and switching
Key Attributes
Model Number:
DP3407Q
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
60mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
74pF
Output Capacitance(Coss):
98pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
580pF
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
DP3407Q
Package:
SOT-23-3L
Product Description
Product Overview
The DP3407Q is a P-Channel Enhancement Mode Field Effect Transistor designed with Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON), enabling high-speed switching. This transistor is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: DOESHARE
- Device Type: P-Channel Enhancement Mode Field Effect Transistor
- Technology: Trench Power LV MOSFET
- Cell Design: High density cell design for Low RDS(ON)
- Switching Speed: High Speed switching
- Marking: DP3407Q A7**
- Shipping: 3,000/Reel
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | TA=25unless otherwise noted | -30 | V | ||
| Gate-source Voltage | VGS | TA=25unless otherwise noted | 20 | V | ||
| Drain Current @ Steady State | ID | TA=25 | -4.1 | A | ||
| Drain Current @ Steady State | ID | TA=70 | -3.2 | A | ||
| Pulsed Drain Current | IDM | -15 | A | |||
| Total Power Dissipation | PD | TA=25 | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | @ Steady State | 82 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V,TC=25 | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.0 | -1.6 | -2.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V, ID=-4.1A | 40 | 60 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-3.5A | 55 | 90 | m | |
| Diode Forward Voltage | VSD | IS=-4.1A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -4.1 | A | |||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHZ | 580 | pF | ||
| Output Capacitance | Coss | 98 | pF | |||
| Reverse Transfer Capacitance | Crss | 74 | pF | |||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-4.1A | 6.8 | nC | ||
| Gate Source Charge | Qgs | 1.0 | nC | |||
| Gate Drain Charge | Qg d | 1.4 | nC | |||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-15V, RL=15,ID=- 1A, RGEN=2.5 | 14 | ns | ||
| Turn-on Rise Time | tr | 61 | ns | |||
| Turn-off Delay Time | tD(off) | 19 | ns | |||
| Turn-off Fall Time | tf | 10 | ns |
Notes:
A. Pulse Test: Pulse Width300us, Duty cycle 2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2411220306_Doeshare-DP3407Q_C2931754.pdf
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