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quality Small Signal Switching Diode DIOTEC LL4148 High Speed Low Leakage Current Glass MiniMELF Package factory
quality Small Signal Switching Diode DIOTEC LL4148 High Speed Low Leakage Current Glass MiniMELF Package factory

Small Signal Switching Diode DIOTEC LL4148 High Speed Low Leakage Current Glass MiniMELF Package

Key Attributes
Model Number: LL4148
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-50℃~+175℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
500mA
Mfr. Part #:
LL4148
Package:
SOD-80C
Product Description

Product Overview

The LL4148, LL4150, LL4151, and LL4448 series are SMD small signal switching diodes designed for high-speed switching applications. These diodes offer very high switching speeds, low junction capacitance, and low leakage current, making them suitable for signal processing and fast switching tasks. They are compliant with RoHS, REACH, and Conflict Minerals regulations, and are available in a Glass MiniMELF (SOD-80C) package. Alternative case outlines are also available, including DO-35, Q-MiniMELF, Q-MicroMELF, SOD-123F, and SOD-323F.

Product Attributes

  • Case Outline: SOD-80C Glass MiniMELF
  • Certifications: Compliant to RoHS, REACH, Conflict Minerals
  • Packaging: Taped and reeled (2500 / 7)
  • Solder & Assembly Conditions: 260C/10s, MSL = 1
  • Grade: Commercial grade

Technical Specifications

Specification LL4148 LL4150 LL4151 LL4448 Unit
Maximum Ratings (TA = 25C unless otherwise specified)
Max. average forward current (DC) IFAV 150 200 300 300 mA
Repetitive peak forward current IFRM 500 500 600 600 mA
Non-repetitive peak forward current IFSM (tp = 1 s) 2000 2000 4000 4000 mA
Reverse voltage VR 75 50 50 50 V
Repetitive peak reverse voltage VRRM 100 75 50 50 V
Max. power dissipation Ptot (Mounted on P.C. board with 25 mm copper pads) 500 mW
Junction temperature Tj 175 C
Storage temperature TS 175 C
Characteristics (Tj = 25C unless otherwise specified)
Forward voltage VF (IF = 5 mA) < 1.0 < 1.0 < 1.2 < 1.0 V
Forward voltage VF (IF = 10 mA) 0.62...0.72 < 1.0 < 1.0 < 1.0 V
Leakage current IR (VR = 20 V) < 25 nA < 50 nA < 25 nA < 50 nA
Leakage current IR (VR = 50 V) < 5 A < 50 A < 5 A < 50 A
Leakage current IR (VR = 75 V) < 100 nA - - -
Leakage current IR (Tj = 150C, VR = 20 V) < 50 A - < 50 A -
Leakage current IR (Tj = 150C, VR = 50 V) - < 100 A - < 50 A
Junction capacitance CT (VR = 0 V, f = 1 MHz) typ. 4 pF
Reverse recovery time trr (IF = 10 mA through/ber IR = 10 mA to/auf IR = 1 mA) < 4 ns
Thermal resistance junction to ambient RthA (Mounted on P.C. board with 25 mm copper pads) < 300 K/W
Dimensions
Dimensions - Mae SOD-80C Glass MiniMELF
Weight approx. 0.04 g

2410010333_DIOTEC-LL4148_C212826.pdf

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