power switching ElecSuper DMP3013SFV-7 ES MOSFET with fast switching and low leakage current features
Key Attributes
Model Number:
DMP3013SFV-7(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
39A
RDS(on):
8mΩ@10V;11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
DMP3013SFV-7(ES)
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The DMP3013SFV-7(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is designed for high density cell structure, ensuring low RDS(on) and providing reliable, rugged performance with fast switching capabilities and avalanche rating. It also features low leakage current.
Product Attributes
- Brand: SuperMOS
- Model: DMP3013SFV-7(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC=25C | -39 | A | ||
| Continuous Drain Current | ID | TC=75C | -30 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 17.8 | W | ||
| Pulsed Drain Current | IDM | a | -156 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | -25 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 93.7 | mJ | ||
| Operating Junction Temperature | TJ | 150 | �b0;C | |||
| Storage Temperature Range | Tstg | -55 | +150 | �b0;C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 40 | �b0;C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 4.2 | �b0;C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±25V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.4 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 8 | 13 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 11.5 | 18 | mΩ | |
| Forward Trans conductance | gFS | VDS=-5.0V, ID=-6A | 24 | 40 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =-15V | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =-15V | 200 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 2.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-20A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID =-20A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID =-20A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 27 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 68 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 39 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.75 | -1.5 | V | |
2504101957_ElecSuper-DMP3013SFV-7-ES_C42412325.pdf
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