N Channel MOSFET ElecSuper AON6204 ES Designed for Power Switching and Charging Circuits Applications
Key Attributes
Model Number:
AON6204(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
RDS(on):
10mΩ@10V;13.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
512pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
AON6204(ES)
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The AON6204(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Model: AON6204(ES)
- Package: PDFN5*6-8L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 32 | A | ||
| Continuous Drain Current | ID | TC=75°C | 24 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 31 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 19 | W | ||
| Pulsed Drain Current | IDM | 120 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 17 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 43.4 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation, t ≤ 10 s | 3.3 | 4 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.4 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 10.0 | 19 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=15A | 13.5 | 26 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 50 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 512 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 225 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 22 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=20A | 8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=20A | 2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=20A | 1.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 4.4 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 7.9 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 15.6 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 3.5 | ns | ||
| Forward Voltage | VSD | Body Diode Characteristics, VGS=0V, IS=1.0A | 0.45 | 1.2 | V | |
2504101957_ElecSuper-AON6204-ES_C42412241.pdf
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