N channel enhancement mode MOSFET ElecSuper AO4838 ES with avalanche rating and halogen free material
Key Attributes
Model Number:
AO4838(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
RDS(on):
7.5mΩ@10V;12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
3.13W
Input Capacitance(Ciss):
1.08nF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
AO4838(ES)
Package:
SOP-8
Product Description
AO4838(ES) N-channel MOSFET
The AO4838(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering features like 30V breakdown voltage, low RDS(ON), high-density cell design, and is Halogen-free and Avalanche Rated.
Product Attributes
- Brand: ElecSuper
- Part Number: AO4838(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 30 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TA=25°C | - | - | 13 | A |
| Continuous Drain Current | ID | TA=75°C | - | - | 10 | A |
| Maximum Power Dissipation | PD | TA=25°C | - | - | 3.13 | W |
| Maximum Power Dissipation | PD | TA=75°C | - | - | 1.88 | W |
| Pulsed Drain Current | IDM | - | - | - | 52 | A |
| Avalanche Current, Single Pulsed | IAS | a | - | - | 16 | A |
| Avalanche Energy, Single Pulsed | EAS | a | - | - | 38 | mJ |
| Operating Junction Temperature | TJ | - | - | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | - | 32 | 40 | °C/W |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | - | 17 | 24 | °C/W |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1.0 | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=13A | - | 7.5 | 12 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | - | 12 | 18 | mΩ |
| Forward Transconductance | gFS | VDS=5.0V, ID=13A | - | 100 | - | S |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | - | 1080 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | - | 180 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | - | 110 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=13A | - | 18 | - | nC |
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=13A | - | 3.5 | - | nC |
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=13A | - | 3 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | - | 6 | - | ns |
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | - | 3 | - | ns |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | - | 22 | - | ns |
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | - | 5 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=10A | - | 0.45 | 1.5 | V |
2504101957_ElecSuper-AO4838-ES_C42412249.pdf
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