Low Loss P Channel MOSFET ElecSuper AO3407A with Advanced Trench Technology and Fast Switching Speed
Key Attributes
Model Number:
AO3407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V;56mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
AO3407A
Package:
SOT23-3L
Product Description
Product Overview
The AO3407A is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and reliability.
Product Attributes
- Brand: ElecSuper
- Model: AO3407A
- Package: SOT23-3L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.8 | A | ||
| Continuous Drain Current | ID | TA=75°C | -3 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 0.9 | |||
| Pulsed Drain Current | IDM | -15 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | +150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 70 | 90 | °C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 63 | 80 | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3.8A | 40 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3 A | 56 | 80 | ||
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 520 | pF | ||
| Output Capacitance | COSS | 100 | ||||
| Reverse Transfer Capacitance | CRSS | 65 | ||||
| Gate Resistance | Rg | f=1MHZ | 7.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-3.8A | 9.2 | 11 | nC | |
| Gate-to-Source Charge | QGS | 1.6 | ||||
| Gate-to-Drain Charge | QGD | 2.2 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=3.5Ω RG=3Ω | 7.5 | ns | ||
| Rise Time | tr | 5.5 | ||||
| Turn-Off Delay Time | td(OFF) | 19 | ||||
| Fall Time | tf | 7 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-AO3407A_C5224209.pdf
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