P Channel Enhancement Mode MOSFET ElecSuper AO4803A with Low Gate Charge and High Reliability
Key Attributes
Model Number:
AO4803A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
39mΩ@10V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
2 P-Channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
AO4803A
Package:
SOP8
Product Description
Product Overview
The AO4803A is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. Its high-density cell design ensures low RDS(on) and it is avalanche rated for reliability.
Product Attributes
- Brand: ElecSuper
- Model: AO4803A
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel (3,000 PCS per reel)
- Reel Size: 13 inches
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Typical | Maximum | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current | ID | TA=25°C | -5.8 | A | |
| Continuous Drain Current | ID | TA=75°C | -4.5 | A | |
| Maximum Power Dissipation | PD | TA=25°C | 3.2 | W | |
| Maximum Power Dissipation | PD | TA=75°C | 1.9 | W | |
| Pulsed Drain Current | IDM | -23.2 | A | ||
| Avalanche Current, Single Pulsed | IAS | a | -9 | A | |
| Avalanche Energy, Single Pulsed | EAS | a | 12 | mJ | |
| Operating Junction Temperature | TJ | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | |
| Electrical Characteristics | |||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-5A | 39 | 60 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 55 | 80 | mΩ |
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 40 | S | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 520 | pF | |
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 100 | pF | |
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 65 | pF | |
| Gate Resistance | Rg | f=1MHz | 7.5 | Ω | |
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID =-5A | 9.2 | 11 | nC |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID =-5A | 1.6 | nC | |
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID =-5A | 2.2 | nC | |
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V RL=3Ω, RG=3Ω | 7.5 | ns | |
| Rise Time | tr | VGS=-10V, VDS=-15V RL=3Ω, RG=3Ω | 5.5 | ns | |
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V RL=3Ω, RG=3Ω | 19 | ns | |
| Fall Time | tf | VGS=-10V, VDS=-15V RL=3Ω, RG=3Ω | 7 | ns | |
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V |
2504101957_ElecSuper-AO4803A_C5224315.pdf
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