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quality SOT363 Plastic Encapsulated Dual NPN Transistor Doeshare MMDT3904 Suitable for Switching Applications factory
quality SOT363 Plastic Encapsulated Dual NPN Transistor Doeshare MMDT3904 Suitable for Switching Applications factory

SOT363 Plastic Encapsulated Dual NPN Transistor Doeshare MMDT3904 Suitable for Switching Applications

Key Attributes
Model Number: MMDT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
2 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3904
Package:
SOT-363
Product Description

Product Overview

The MMDT3904 is a dual NPN transistor featuring epitaxial planar die construction. It is ideal for low power amplification and switching applications. This product is available in a SOT-363 plastic-encapsulated package.

Product Attributes

  • Brand: DOESHARE
  • Package Type: SOT-363 Plastic-Encapsulate Transistors
  • Construction: Epitaxial planar die
  • Marking: K6N

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.05 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.05 A
Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.05 A
DC current gain hFE(1) VCE=1V,IC=0.1mA 40
DC current gain hFE(2) VCE=1V,IC=1mA 70
DC current gain hFE(3) VCE=1V,IC=10mA 100 300
DC current gain hFE(4) VCE=1V,IC=50mA 60
DC current gain hFE(5) VCE=1V,IC=100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=10mA,IB=1mA 0.2 V
Collector-emitter saturation voltage VCE(sat)2 IC=50mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V
Base-emitter saturation voltage VBE(sat)2 IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz
Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF
Noise figure NF VCE=5V,Ic=0.1mA,f=1kHz,RS=1K 5 dB
Delay time td VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS
Rise time tr VCC=3V, IC=10mA IB1=- IB2=1mA 35 nS
Storage time ts VCC=3V, IC=10mA IB1=- IB2=1mA 200 nS
Fall time tf VCC=3V, IC=10mA IB1=- IB2=1mA 50 nS
Collector-Base Voltage (VCBO) 60 V
Collector-Emitter Voltage (VCEO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current - Continuous (IC) 0.2 A
Collector Power Dissipation (PC) 0.2 W
Junction Temperature (TJ) 150
Storage Temperature (Tstg) -55 150

2411220100_Doeshare-MMDT3904_C2931757.pdf

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