Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general purpose electronic circuits
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for general-purpose applications. It offers a power dissipation of 300mW and is characterized by high stability and reliability. This transistor is complementary to the S8050. Its small outline plastic package makes it suitable for surface mounting.
Product Attributes
- Brand: DOESHARE (implied by the document source)
- Package Type: SOT-23 Plastic-Encapsulated Transistor
- Material: Plastic
- Certifications: Epoxy UL: 94V-0
- Mounting Position: Any
- Marking: Y2
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current-Continuous | IC | -1500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55-+150 | ||
| Thermal resistance From junction to ambient | RJA | 417 | /W | |
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -40 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -5 | V |
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA |
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA |
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -100 | nA |
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 - 400 | |
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 50 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.60 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.20 | V |
| Transition frequency | fT | VCE=-1V, IC=-10mA | 100 | MHz |
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 20 | pF |
hFE(1) Classification
| RANK | RANGE |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package. Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.
2411220031_Doeshare-SS8550_C2931718.pdf
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