High density cell design ElecSuper AO4614-ES SuperMOS MOSFET with fast switching and low gate charge
Key Attributes
Model Number:
AO4614-ES
Product Custom Attributes
Drain To Source Voltage:
40V;40V
Current - Continuous Drain(Id):
6.8A;5A
Operating Temperature -:
-
RDS(on):
20mΩ@10V;38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.55V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF;65pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
100pF;140pF
Input Capacitance(Ciss):
410pF;660pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.5nC@10V;13.5nC@10V
Mfr. Part #:
AO4614-ES
Package:
SOP8
Product Description
Product Overview
The AO4614-ES is a SuperMOS complementary MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for level-shifted high-side switching and various other applications, offering fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and features low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOP8
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | N-channel Limit | P-channel Limit | Unit |
|---|---|---|---|---|
| Absolute Maximum Rating & Thermal Characteristics | ||||
| Drain-Source Voltage | BVDSS | 40 | -40 | V |
| Gate-Source Voltage | VGS | ±20 | ±20 | V |
| Continuous Drain Current (TA=25°C) | ID | 6.8 | -5.0 | A |
| Continuous Drain Current (TA=75°C) | ID | 5.2 | -3.9 | A |
| Maximum Power Dissipation (TA=25°C) | PD | 2 | 2 | W |
| Maximum Power Dissipation (TA=75°C) | PD | 1.2 | 1.2 | W |
| Pulsed Drain Current | IDM | 27.2 | -20 | A |
| Avalanche Current, Single Pulsed | IAS | 11 | -16.5 | A |
| Avalanche Energy, Single Pulsed | EAS | 18 | 40 | mJ |
| Operating Junction Temperature | TJ | 150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| N-channel Electrical Characteristics (TA = 25°C) | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | uA | |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 1.5 - 2.2 | V | |
| Drain-to-source On-resistance (VGS=10V, ID=6A) | RDS(on) | 20 - 25 | mΩ | |
| Drain-to-source On-resistance (VGS=4.5V, ID=5A) | RDS(on) | 28 - 38 | mΩ | |
| Forward Transconductance | gFS | 40 | S | |
| Input Capacitance | CISS | 410 | pF | |
| Output Capacitance | COSS | 100 | pF | |
| Reverse Transfer Capacitance | CRSS | 35 | pF | |
| Total Gate Charge | QG(TOT) | 8.5 | nC | |
| Gate-to-Source Charge | QGS | 1.2 | ||
| Gate-to-Drain Charge | QGD | 2.4 | ||
| Turn-On Delay Time | td(ON) | 4.4 | ns | |
| Rise Time | tr | 3.3 | ns | |
| Turn-Off Delay Time | td(OFF) | 15.8 | ns | |
| Fall Time | tf | 3.2 | ns | |
| Forward Voltage (Body Diode) | VSD | 0.45 - 1.5 | V | |
| P-channel Electrical Characteristics (TA = 25°C) | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | -40 | V | |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | |
| Gate-to-source Leakage Current | IGSS | ±1 | uA | |
| Gate Threshold Voltage | VGS(TH) | -1.0 - -1.55 - -2.5 | V | |
| Drain-to-source On-resistance (VGS=10V, ID=-5A) | RDS(on) | 38 - 52 | mΩ | |
| Drain-to-source On-resistance (VGS=-4.5V, ID=-4A) | RDS(on) | 48 - 64 | mΩ | |
| Forward Transconductance | gFS | 40 | S | |
| Input Capacitance | CISS | 660 | pF | |
| Output Capacitance | COSS | 140 | pF | |
| Reverse Transfer Capacitance | CRSS | 65 | pF | |
| Total Gate Charge | QG(TOT) | 13.5 | nC | |
| Gate-to-Source Charge | QGS | 2 | ||
| Gate-to-Drain Charge | QGD | 4 | ||
| Turn-On Delay Time | td(ON) | 7.5 | ns | |
| Rise Time | tr | 6.6 | ns | |
| Turn-Off Delay Time | td(OFF) | 26 | ns | |
| Fall Time | tf | 11.5 | ns | |
| Forward Voltage (Body Diode) | VSD | -4.5 - -1.5 | V | |
Applications
- PWM applications
- Load switch
- Power management in portable/desktop PCs
- DC/DC conversion
2504101957_ElecSuper-AO4614-ES_C19725081.pdf
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