Durable P Channel MOSFET ElecSuper IRF9310TRPBF ES Designed for Charging Circuit and DC DC Converter
Key Attributes
Model Number:
IRF9310TRPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
21A
RDS(on):
8.3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
561pF
Input Capacitance(Ciss):
3.91nF
Pd - Power Dissipation:
4.2W
Output Capacitance(Coss):
692pF
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
IRF9310TRPBF(ES)
Package:
SOP-8
Product Description
Product Description
The IRF9310TRPBF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard product and is Pb-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.2 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-15A | 4.1 | 5.3 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-10A | 6.4 | 8.3 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-15V | 3910 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-15V | 692 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-15V | 561 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to -10V, VDS=-15V, ID=-15A | 78 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -10V, VDS=-15V, ID=-15A | 13 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to -10V, VDS=-15V, ID=-15A | 18 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-15V, ID=-15A, RG=3 | 17.5 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-15V, ID=-15A, RG=3 | 50 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-15V, ID=-15A, RG=3 | 108 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-15V, ID=-15A, RG=3 | 70 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-15A | -1.2 | V | ||
2504101957_ElecSuper-IRF9310TRPBF-ES_C46970793.pdf
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