Power switching MOSFET ElecSuper AO4459 ES featuring trench technology and low RDS ON resistance
Key Attributes
Model Number:
AO4459(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
37.5mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
63pF@15V
Input Capacitance(Ciss):
550pF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
11.2nC@10V
Mfr. Part #:
AO4459(ES)
Package:
SOP-8
Product Description
Product Overview
The AO4459(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is well-suited for DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Model: AO4459(ES)
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Packaging: SOP8, Tape & Reel (3,000 PCS per reel)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -5.8 | A | ||
| Continuous Drain Current | ID | TA=75°C | -4.5 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.9 | W | ||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Avalanche Current, Single Pulsed | IAS | Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | -9 | A | ||
| Avalanche Energy, Single Pulsed | EAS | Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | 12 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10s | 32 | 40 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-Source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-Source On-resistance | RDS(on) | VGS=-10V, ID=-5A | 37.5 | 60 | mΩ | |
| Drain-to-Source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 54 | 80 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 550 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 105 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 63 | pF | ||
| Gate Resistance | Rg | f=1MHz | 7.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-5A | 9.5 | 11.2 | nC | |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID =-5A | 4.5 | 6 | nC | |
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID =-5A | 1.8 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=3.5Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=3.5Ω, RG=3Ω | 6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=3.5Ω, RG=3Ω | 19 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=3.5Ω, RG=3Ω | 7 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.2 | V | |
2504101957_ElecSuper-AO4459-ES_C42412323.pdf
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