N Channel MOSFET ElecSuper WNM6002-3TR ES for DC DC Conversion Power Switching and Charging Circuits
Key Attributes
Model Number:
WNM6002-3/TR-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.3pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Output Capacitance(Coss):
3.3pF
Input Capacitance(Ciss):
15pF
Gate Charge(Qg):
1.6nC@4.5V
Mfr. Part #:
WNM6002-3/TR-ES
Package:
SOT-323
Product Description
Product Overview
The WNM6002-3/TR-ES is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering a reliable and rugged solution with human body model ESD protection and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Part Number: WNM6002-3/TR-ES
- Material: Halogen free
- Certifications: UL 94V-0
- ESD Protection: 2KV (Human Body Model)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 0.3 | A | ||
| Continuous Drain Current | ID | TA=100°C | 0.2 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Pulsed Drain Current | IDM | 1.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | µA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.7 | 1.1 | 1.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.8 | 2.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.0 | 3.0 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 15.0 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 3.3 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 1.3 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.3A | 1.6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.3A | 0.2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.3A | 0.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 2 | ns | ||
| Rise Time | tr | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 14 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 6 | ns | ||
| Fall Time | tf | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 19 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.3A | 1.5 | V | ||
2504101957_ElecSuper-WNM6002-3-TR-ES_C22379640.pdf
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