SOT23 Package NPN Silicon Transistor EIC MMBT3904 Designed for Switching and Amplifier Applications
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
MMBT3904 NPN Silicon General Purpose Transistor
The MMBT3904 is an NPN Silicon General Purpose Transistor designed for switching and amplifier applications. It comes in a SOT-23 Plastic Package.
Product Attributes
- Brand: EIC Semiconductor (implied by www.eicsemi.com)
- Package Type: SOT-23 Plastic Package
- Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. |
| Absolute Maximum Ratings | |||||
| Collector Base Voltage | VCBO | 60 | V | ||
| Collector Emitter Voltage | VCEO | 40 | V | ||
| Emitter Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 200 | mA | ||
| Power Dissipation | Ptot | 350 | mW | ||
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | -55 to +150 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| DC Current Gain at VCE = 1 V, IC = 0.1 mA | hFE | 40 | - | 300 | |
| DC Current Gain at VCE = 1 V, IC = 1 mA | hFE | 70 | - | - | |
| DC Current Gain at VCE = 1 V, IC = 10 mA | hFE | 100 | - | - | |
| DC Current Gain at VCE = 1 V, IC = 50 mA | hFE | 60 | - | - | |
| DC Current Gain at VCE = 1 V, IC = 100 mA | hFE | 30 | - | - | |
| Collector Base Cutoff Current at VCB = 30 V | ICBO | - | nA | 50 | |
| Emitter Base Cutoff Current at VEB = 6 V | IEBO | - | nA | 50 | |
| Collector Base Breakdown Voltage at IC = 10 A | V(BR)CBO | 60 | V | - | |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 40 | V | - | |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 6 | V | - | |
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VCE(sat) | - | V | 0.2 | |
| Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA | VCE(sat) | - | V | 0.3 | |
| Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VBE(sat) | 0.65 | V | 0.85 | |
| Base Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA | VBE(sat) | - | V | 0.95 | |
| Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz | fT | 300 | MHz | - | |
| Collector Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz | Cob | - | pF | 4 | |
| Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | td | - | ns | 35 | |
| Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | tr | - | ns | 35 | |
| Storage Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | ts | - | ns | 200 | |
| Fall Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | tf | - | ns | 50 | |
2410121629_EIC-MMBT3904_C3015353.pdf
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