ElecSuper AON6407 ES P channel MOSFET offering performance for power switching and charging circuits
Key Attributes
Model Number:
AON6407(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
71.7A
RDS(on):
2.8mΩ@10V;3.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
660pF
Output Capacitance(Coss):
880pF
Input Capacitance(Ciss):
3.456nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
AON6407(ES)
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The AON6407(ES) is a P-channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering a reliable and rugged solution with high-density cell design. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: AON6407(ES)
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | -71.7 | A | ||
| Continuous Drain Current | ID | TC=75°C | -55.5 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 48.0 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 28.8 | W | ||
| Pulsed Drain Current | IDM | a | -286.8 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 46 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 317 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 2.8 | 5.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-10A | 3.8 | 7.2 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-15V | 3456 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-15V | 880 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-15V | 660 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-10A | 78 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-10A | 12 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-10A | 45 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 15 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 15 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 95 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 75 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-10A | -0.7 | -1.5 | V | |
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10 s | 43 | 60 | °C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 1.0 | 2.6 | °C/W | |
2504101957_ElecSuper-AON6407-ES_C42412354.pdf
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