ElecSuper BSC070N10NS3G ES N Channel MOSFET with Shielded Gate Trench Technology and Low Gate Charge
Key Attributes
Model Number:
BSC070N10NS3G-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
83A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
575pF
Input Capacitance(Ciss):
1.895nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
28.5nC@10V
Mfr. Part #:
BSC070N10NS3G-ES
Package:
PDFN5x6-8L
Product Description
Product Overview
The BSC070N10NS3G-ES is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 92 | A | ||
| TC=100C | 55.2 | A | ||||
| Maximum Power Dissipation | PD | 125 | W | |||
| Pulsed Drain Current | IDM | 368 | A | |||
| Single Pulse Avalanche Current | IAS | 1 | 24 | A | ||
| Single Pulse Avalanche Energy | EAS | 1 | 144 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 1.0 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1.0 | uA | ||
| Gate-to-Source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.4 | 3.0 | 3.6 | V |
| Drain-to-Source On-resistance | RDS(on) | VGS=10V, ID=30A | 6.5 | 8.4 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1800 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 1357 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 53 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=50V, ID=20A | 29 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=50V, ID=20A | 6.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=50V, ID=20A | 8.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=20A, RG=6Ω | 8.4 | ns | ||
| Rise Time | tr | VGS=10V, VDD=50V, ID=20A, RG=6Ω | 9.4 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=20A, RG=6Ω | 27 | ns | ||
| Fall Time | tf | VGS=10V, VDD=50V, ID=20A, RG=6Ω | 18 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2512241523_ElecSuper-BSC070N10NS3G-ES_C39832216.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
