Low Gate Charge N Channel MOSFET ElecSuper DMN3404L 7 ES Ideal for Charging Circuit and Power Switch
Product Overview
The DMN3404L-7-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: DMN3404L-7-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel
- Reel Size: 7 inches
- Quantity per reel: 3,000 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5A | 17 | 24 | m | |
| VGS=4.5V, ID=4A | 26 | 38 | m | |||
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =15V | 255 | pF | ||
| Output Capacitance | COSS | 45 | pF | |||
| Reverse Transfer Capacitance | CRSS | 35 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=5A | 9.8 | 12 | nC | |
| Gate-to-Source Charge | QGS | 1.8 | 2.2 | nC | ||
| Gate-to-Drain Charge | QGD | 2.2 | 3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=2, RGEN=3 | 5 | ns | ||
| Rise Time | tr | 3.2 | ns | |||
| Turn-Off Delay Time | td(OFF) | 24 | ns | |||
| Fall Time | tf | 6 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-DMN3404L-7-ES_C21713844.pdf
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