ElecSuper AO3409 ES P Channel MOSFET designed for fast switching and low leakage current applications
Key Attributes
Model Number:
AO3409-ES
Product Custom Attributes
Pd - Power Dissipation:
1.14W
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
60mΩ@10V;105mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 P-Channel
Output Capacitance(Coss):
52pF
Input Capacitance(Ciss):
260pF
Gate Charge(Qg):
5.5nC@10V
Mfr. Part #:
AO3409-ES
Package:
SOT-23
Product Description
AO3409-ES P-Channel MOSFET
The AO3409-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. Key advantages include fast switching, high-density cell design for low RDS(on), and a reliable, rugged construction with avalanche rating and low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: China (implied by www.elecsuper.com and typical manufacturing locations for such components)
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -3.8 | A | ||
| TA=100C | -2.3 | A | ||||
| Pulsed Drain Current | IDM | -15.2 | A | |||
| Maximum Power Dissipation | PD | 1.14 | W | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 110 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.2 | -2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3.0A | 60 | 75 | m | |
| VGS=-4.5V, ID=-2.0A | 105 | 132 | m | |||
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 260 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 52 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 41 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-3A | 5.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-3A | 0.9 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-3A | 1.3 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-15V, ID=-3A, RG=2.5 | 10 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-15V, ID=-3A, RG=2.5 | 54 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-15V, ID=-3A, RG=2.5 | 16 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-15V, ID=-3A, RG=2.5 | 8 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-3.0A | -1.5 | V | ||
2504101957_ElecSuper-AO3409-ES_C19725086.pdf
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