Low gate charge P Channel MOSFET ElecSuper AO4405 optimized for power switching and DC DC conversion
Key Attributes
Model Number:
AO4405
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37.5mΩ@10V;54mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 P-Channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
AO4405
Package:
SOP8
Product Description
Product Overview
The AO4405 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Origin: N/A
- Material: Halogen free
- Color: N/A
- Certifications: UL 94V-0
- Flotation Rating: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25℃ | -5.8 | A | ||
| Continuous Drain Current | ID | TA=75℃ | -4.5 | A | ||
| Maximum Power Dissipation | PD | TA=25℃ | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=75℃ | 1.9 | W | ||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | -9 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 12 | mJ | ||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | +150 | ℃ | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10s) | RθJA | 32 | 40 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-5A | 37.5 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 54 | 80 | mΩ | |
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 550 | pF | ||
| Output Capacitance | COSS | 105 | pF | |||
| Reverse Transfer Capacitance | CRSS | 63 | pF | |||
| Gate Resistance | Rg | f=1MHZ | 7.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-5A | 9.5 | 11.2 | nC | |
| Gate-to-Source Charge | QGS | 4.5 | 6 | |||
| Gate-to-Drain Charge | QGD | 1.8 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=3.5Ω RG=3Ω | 8 | ns | ||
| Rise Time | tr | 6 | ||||
| Turn-Off Delay Time | td(OFF) | 19 | ||||
| Fall Time | tf | 7 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.2 | V | |
2504101957_ElecSuper-AO4405_C5224295.pdf
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