Compact ElecSuper S8050 NPN Transistor with 500mA Collector Current and 40V Collector Base Voltage
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
S8050 NPN Transistor - VCBO 40V, IC 500mA, SOT-23
The S8050 is a high-stability, high-reliability NPN transistor designed for general-purpose applications. It offers a complementary function to the S8550 and features a power dissipation of 300mW. Encapsulated in a standard SOT-23 plastic package, this transistor is suitable for various electronic circuits requiring robust performance.
Product Attributes
- Brand: ElecSuper
- Model Series: SuperTransistor
- Package Type: SOT-23 Small Outline Plastic Package
- Encapsulation Material: Epoxy UL: 94V-0
- Complementary to: S8550
Technical Specifications
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||
| Collector-Base Voltage | VCBO | - | 40 | V |
| Collector-Emitter Voltage | VCEO | - | 25 | V |
| Emitter-Base Voltage | VEBO | - | 5 | V |
| Collector Current-Continuous | IC | - | 500 | mA |
| Collector Power Dissipation | PC | - | 300 | mW |
| Junction Temperature | Tj | - | 150 | |
| Storage Temperature | TSTG | - | -55~150 | |
| Thermal Resistance (Junction to Ambient) | RJA | - | 417 | /W |
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 40 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100uA, IC=0 | 5 | V |
| Collector cut-off current | ICEO | VCE=20V, IB=0 | 100 | nA |
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 100 | nA |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA |
| DC current gain (hFE1) | hFE1 | VCE=1V, IC=50mA | 120 - 400 | - |
| DC current gain (hFE2) | hFE2 | VCE=1V, IC=500mA | 50 | - |
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.60 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.20 | V |
| Transition frequency | fT | VCE=6V, IC=20mA, f=30MHz | 150 | MHz |
| hFE Classification | ||||
| Rank | Range | |||
| L | 120~200 | |||
| H | 200~350 | |||
| J | 300~400 | |||
Dimensions and Patterns (SOT-23)
Units: mm
| Symbol | Dimensions (Min.) | Dimensions (Max.) | Symbol | Dimensions (Min.) | Dimensions (Max.) |
|---|---|---|---|---|---|
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | - |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | - |
| D | 2.800 | 3.000 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 |
Notes:
1. Controlling dimension: in millimeters.
2. General tolerance: 0.05mm.
3. The pad layout is for reference only.
4. Unit: mm.
2410121717_ElecSuper-S8050_C5249674.pdf
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