NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier
Key Attributes
Model Number:
MPSA42
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
MPSA42
Package:
TO-92
Product Description
MPSA42 NPN Silicon Epitaxial Planar Transistor
The MPSA42 is an NPN silicon epitaxial planar transistor designed for high voltage switching and amplifier applications. It is recommended to use the complementary PNP transistors MPSA92 and MPSA93.
Product Attributes
- Certifications: TH97/10561QM, TW00/17276EM
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | |||||
| Collector Base Voltage | VCBO | 300 | V | ||
| Collector Emitter Voltage | VCEO | 300 | V | ||
| Emitter Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Power Dissipation | Ptot | 625 | mW | ||
| Junction Temperature | Tj | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 to +150 | °C | ||
| Characteristics at Ta = 25 °C | |||||
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 25 | - | ||
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 40 | - | ||
| DC Current Gain at VCE = 10 V, IC = 30 mA | hFE | 40 | - | ||
| Collector Base Cutoff Current at VCB = 200 V | ICBO | µA | 0.1 | ||
| Collector Base Cutoff Current at VCB = 160 V | ICBO | µA | 0.1 | ||
| Emitter Base Cutoff Current at VEB = 6 V | IEBO | µA | 0.1 | ||
| Emitter Base Cutoff Current at VEB = 4 V | IEBO | µA | 0.1 | ||
| Collector Base Breakdown Voltage at IC = 100 µA | V(BR)CBO | 300 | V | ||
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 300 | V | ||
| Emitter Base Breakdown Voltage at IE = 100 µA | V(BR)EBO | 6 | V | ||
| Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VCE(sat) | V | 0.5 | ||
| Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VBE(sat) | V | 0.9 | ||
| Gain Bandwidth Product at IC = 10 mA ,VCE = 20 V, f = 100 MHz | fT | 50 | MHz | ||
| Collector Output Capacitance at VCB = 20 V, f = 1 MHz | Cob | pF | 3 | ||
2410121326_EIC-MPSA42_C2978815.pdf
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