Compact SOT23 package ElecSuper MMBT4403 transistor designed for switching applications and stability
Key Attributes
Model Number:
MMBT4403
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT4403
Package:
SOT-23
Product Description
Product Overview
The MMBT4403 is a SuperTransistor, a PNP bipolar junction transistor designed for switching applications. It features a low collector-emitter saturation voltage and a high transition frequency, making it suitable for various electronic circuits. The transistor is housed in a compact SOT-23 small outline plastic package, offering high stability and reliability with a power dissipation of 300mW.
Product Attributes
- Brand: ElecSuper
- Package Type: SOT-23 Small Outline Plastic Package
- Material: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Rating & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -600 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | ~150 | |||
| Thermal resistance From junction to ambient | RJA | 417 | /W | |||
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-35V, VEB(off)=-0.4V | -100 | nA | ||
| Collector cut-off current | ICBO | VCB=-35V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -100 | nA | ||
| DC current gain | hFE1 | VCE=-1V, IC=-0.1mA | 30 | |||
| DC current gain | hFE2 | VCE=-1V, IC=-1mA | 60 | |||
| DC current gain | hFE3 | VCE=-1V, IC=-10mA | 100 | |||
| DC current gain | hFE4 | VCE=-2V, IC=-150mA | 100 | 300 | ||
| DC current gain | hFE5 | VCE=-2V, IC=-500mA | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA, IB=-15mA | -0.40 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.75 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-150mA, IB=-15mA | -0.95 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB=-50mA | -1.30 | V | ||
| Transition frequency | fT | VCE=-10V, IC=-20mA, f=100MHz | 200 | MHz | ||
| Delay time | td | VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=-30V, IC=-150mA, IB1=IB2=-15mA | 225 | ns | ||
| Fall time | tf | 60 | ns | |||
Dimensions and Patterns (SOT-23)
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. |
|---|---|---|---|---|---|
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | |
| D | 2.800 | 3.000 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 |
Note:
1. Controlling dimension: in millimeters
2. General tolerance: 0.05mm
3. The pad layout is for reference only
4. Unit: mm
2410121917_ElecSuper-MMBT4403_C5249686.pdf
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