High Current Capacity N Channel MOSFET ElecSuper ESE4060K SuperMOS TO 252 for Charging Applications
Key Attributes
Model Number:
ESE4060K
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
79.7A
RDS(on):
4.2mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
192pF@25V
Pd - Power Dissipation:
59.5W
Input Capacitance(Ciss):
3.183nF@25V
Gate Charge(Qg):
59nC@10V
Mfr. Part #:
ESE4060K
Package:
TO-252
Product Description
Product Overview
The ESE4060K is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 79.7 | A | ||
| Continuous Drain Current | ID | TC=100C | 50.4 | A | ||
| Maximum Power Dissipation | PD | 59.5 | W | |||
| Pulsed Drain Current | IDM | 319.1 | A | |||
| Single Pulse Avalanche Current | IAS | a | 20.4 | A | ||
| Single Pulse Avalanche Energy | EAS | a | 104 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 2.1 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=30A | 4.2 | 5.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 5.8 | 10 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3183 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 225 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 192 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDD=20V, ID=30A | 59 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDD=20V, ID=30A | 12 | |||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDD=20V, ID=30A | 12 | |||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=20V, ID=30A, RG=3Ω | 11 | ns | ||
| Rise Time | tr | VGS=10V, VDD=20V, ID=30A, RG=3Ω | 32 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=20V, ID=30A, RG=3Ω | 51 | ns | ||
| Fall Time | tf | VGS=10V, VDD=20V, ID=30A, RG=3Ω | 13 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.5 | V | ||
2504101957_ElecSuper-ESE4060K_C42420753.pdf
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