Power Switching N Channel MOSFET ElecSuper IRFB3607PBF ES Featuring Low Gate Charge and Rugged Design
Key Attributes
Model Number:
IRFB3607PBF-ES
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
266pF
Pd - Power Dissipation:
147W
Input Capacitance(Ciss):
4.065nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
IRFB3607PBF-ES
Package:
TO-220AB
Product Description
Product Overview
The IRFB3607PBF-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design for low on-resistance, reliability, and ruggedness. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Part Number: IRFB3607PBF-ES
- Package: TO-220
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | BVDSS | 68 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 80 | A | TC=25°C |
| Continuous Drain Current | ID | 52 | A | TC=75°C |
| Maximum Power Dissipation | PD | 147 | W | |
| Pulsed Drain Current | IDM | 320 | A | |
| Avalanche Current, Single Pulsed | IAS | 22 | A | a |
| Avalanche Energy, Single Pulsed | EAS | 121 | mJ | a |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 0.85 | °C/W | Typical |
| Drain-to-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=68V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V | VGS=VDS, ID=250uA (Min-Max), 2.9 (Typ) |
| Drain-to-source On-resistance | RDS(on) | 6.6 - 8.6 | mΩ | VGS=10V, ID=30A (Typ-Max), 6.6 (Typ) |
| Forward transconductance | gfs | 150 | S | VDS=5V, ID=30A |
| Input Capacitance | CISS | 4065 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 266 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 230 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 35 | nC | VGS=10V, VDS=30V, ID=20A |
| Gate-to-Source Charge | QGS | 11 | nC | VGS=10V, VDS=30V, ID=20A |
| Gate-to-Drain Charge | QGD | 9 | nC | VGS=10V, VDS=30V, ID=20A |
| Turn-On Delay Time | td(ON) | 15 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Rise Time | tr | 95 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 48 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Fall Time | tf | 33 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=30A |
2504101957_ElecSuper-IRFB3607PBF-ES_C21713864.pdf
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