PNP Transistor ElecSuper SS8550 SOT23 Plastic Package Suitable for General Purpose Electronic Circuits
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
SS8550 PNP Transistor - SOT-23 Plastic-Encapsulate
The SS8550 is a PNP transistor designed for general-purpose applications. It is complementary to the SS8050 and offers high stability and reliability. Packaged in a SOT-23 small outline plastic package, this transistor is suitable for various electronic circuits requiring PNP amplification or switching capabilities.
Product Attributes
- Brand: ElecSuper
- Package Type: SOT-23 Small Outline Plastic
- Encapsulation: Plastic
- Material: Epoxy UL: 94V-0
- Polarity: PNP
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -1500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | |||
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -5 | V | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE1 | VCE=-1V, IC=-100mA | 120 | 400 | ||
| DC current gain | hFE2 | VCE=-1V, IC=-800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.50 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.20 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1.00 | V | ||
| Transition frequency | fT | VCE=-10V, IC=-50mA, f=30MHz | 100 | MHz | ||
| Collector output capacitance | COB | VCB=-10V, IE=0, f=1MHz | 20 | pF | ||
| Classification of hFE(1) | ||||||
| Rank | Range | |||||
| L | 120~200 | |||||
| H | 200~350 | |||||
| J | 300~400 | |||||
Dimensions and Patterns (SOT-23)
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. |
|---|---|---|---|---|---|
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | |
| D | 2.800 | 3.00 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 | |
| Additional Dimensions: 0.80, 2.02, 1.90, 0.60 |
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.
2410121717_ElecSuper-SS8550_C5249677.pdf
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