Low Gate Charge P Channel MOSFET ElecSuper FDS4435A ES Suitable for DC DC Converter Applications
Key Attributes
Model Number:
FDS4435A-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
RDS(on):
13.5mΩ@10V;18.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.23nF
Output Capacitance(Coss):
160pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
FDS4435A-ES
Package:
SOP-8
Product Description
Product Overview
The FDS4435A-ES is a P-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13.5 | 21 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 18.5 | 27 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | VGS=0V VDS =-15V f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V VDS =-15V f=1MHz | 145 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 10 | |||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V VDS=-15V ID =-10A | 6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V VDS=-15V ID =-10A | 4.3 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=1 RG=3 | 18 | ns | ||
| Rise Time | tr | VGS=-10V VDS=-15V RL=1 RG=3 | 22 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V VDS=-15V RL=1 RG=3 | 55 | ns | ||
| Fall Time | tf | VGS=-10V VDS=-15V RL=1 RG=3 | 42 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1 | V | |
| ABSOLUTE MAXIMUM RATING & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current | ID | TA=25C | -10.5 | A | ||
| Continuous Drain Current | ID | TA=70C | -8.0 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=70C | 2.0 | W | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Avalanche Current, Single Pulsed | IAS | -18.5 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 51 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 32 | 40 | C/W | |
| Junction-to-Lead Thermal Resistance | RJL | Single Operation | 3.2 | 4 | C/W | |
2504101957_ElecSuper-FDS4435A-ES_C22363745.pdf
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