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quality General purpose NPN transistor ElecSuper MMBT3904 with 60V collector base voltage and 200mA current factory
quality General purpose NPN transistor ElecSuper MMBT3904 with 60V collector base voltage and 200mA current factory

General purpose NPN transistor ElecSuper MMBT3904 with 60V collector base voltage and 200mA current

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

Product Overview

The MMBT3904 is an NPN transistor from ElecSuper, designed for general-purpose applications. It features a Collector-Base Voltage (VCBO) of 60V and a continuous Collector Current (IC) of 200mA, with a power dissipation of 200mW. This transistor offers high stability and reliability, serving as a complementary part to the MMBT3906. It is housed in a compact SOT-23 plastic package, suitable for various mounting positions.

Product Attributes

  • Brand: ElecSuper
  • Product Line: SuperTransistor
  • Package Type: SOT-23 Plastic-Encapsulate
  • Transistor Type: NPN
  • Complementary to: MMBT3906
  • Material: Plastic-Encapsulate
  • Certifications: Epoxy UL: 94V-0

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings & Thermal Characteristics
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 200 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 150
Thermal Resistance Junction to Ambient RJA 625 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10uA, IC=0 6 V
Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA
Collector cut-off current ICBO VCB=60V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain hFE1 VCE=1V, IC=10mA 100 300
DC current gain hFE2 VCE=1V, IC=50mA 60
DC current gain hFE3 VCE=1V, IC=100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.30 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V
Transition frequency fT VCE=20V, IC=10mA, f=100MHz 300 MHz
Delay time td VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 35 ns
Rise time tr VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 35 ns
Storage time ts VCC=3V, IC=10mA, IB1=IB2=1mA 200 ns
Fall time tf VCC=3V, IC=10mA, IB1=IB2=1mA 50 ns
Classification of hFE
hFE 100~300
Rank L H
Range 100~200 200~300
Dimensions and Patterns (SOT-23)
Symbol Dimensions (mm) Min. Dimensions (mm) Max. Note
A 0.900 1.150
A1 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950 (TYP)
e1 1.800 2.000
L 0.550 (REF)
L1 0.300 0.500
0 8
0.80 2.02
1.90 0.60
Note: 1. Controlling dimension: in millimeters 2. General tolerance: 0.05mm 3. The pad layout is for reference only 4. Unit: mm

2410121717_ElecSuper-MMBT3904_C5249683.pdf

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