Compact P Channel MOSFET ElecSuper IRF5305PBF ES with TO 220F Package and Low Gate Threshold Voltage
Key Attributes
Model Number:
IRF5305PBF(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
24A
RDS(on):
27mΩ@10V;31mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
159pF
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
3.941nF
Output Capacitance(Coss):
191pF
Gate Charge(Qg):
46.6nC@10V
Mfr. Part #:
IRF5305PBF(ES)
Package:
TO-220F
Product Description
Product Overview
The IRF5305PBF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Package: TO-220F
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 27 | 34 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-20A | 31 | 38 | m | |
| Forward Transconductance | gFS | VDS=-5V, ID=-20A | 60 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 3941 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V f=1MHz | 191 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V f=1MHz | 159 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-20V ID =-20A | 46.6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V ID =-20A | 9.1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V ID =-20A | 6.2 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-1A, RG=3 | 45 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, ID=-1A, RG=3 | 28 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, ID=-1A, RG=3 | 80 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, ID=-1A, RG=3 | 6.6 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -1.2 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -24 | A | ||
| Continuous Drain Current | ID | TA=100C | -17 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 43 | W | ||
| Maximum Power Dissipation | PD | TA=100C | 21 | W | ||
| Pulsed Drain Current | IDM | -60 | A | |||
| Avalanche Current, Single Pulsed | IAS | -26.5 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 105 | mJ | |||
| Operating Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance(t10s) | RJA | 10 | 12 | C/W | ||
| Junction-to-Ambient Thermal Resistance (Steady-State) | RJA | 48.5 | 58 | C/W | ||
| Junction-to-Case Thermal Resistance (Steady-State) | RJC | 2.9 | 3.5 | C/W | ||
2506121200_ElecSuper-IRF5305PBF-ES_C49108753.pdf
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