Power Switch and Charging Circuit Solutions Featuring ElecSuper ESN4485 P Channel Enhancement MOSFET
Key Attributes
Model Number:
ESN4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
34A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.5nF@20V
Pd - Power Dissipation:
18W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
ESN4485
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN4485 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Model: ESN4485
- Package: PDFN3X3-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-40V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.6 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13 | 16 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7.5A | 17 | 20 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-20V, f=1MHz | 2500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V, f=1MHz | 260 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V, f=1MHz | 180 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-20V, ID=-10A | 42 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V, ID=-10A | 7 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V, ID=-10A | 8.8 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-20V, RL=1, RG=3 | 10 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-20V, RL=1, RG=3 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-20V, RL=1, RG=3 | 55 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-20V, RL=1, RG=3 | 30 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-10A | -1.2 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | -34 | A | ||
| Continuous Drain Current | ID | TC=75C | -26 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 18 | W | ||
| Pulsed Drain Current | IDM | -120 | A | |||
| Avalanche Current, Single Pulsed | IAS | -34 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 173 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 40 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 4.2 | C/W | ||
2504101957_ElecSuper-ESN4485_C5224302.pdf
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