ElecSuper IRFR220NTRPBF ES MOSFET Offering High Avalanche Energy and Low Gate Charge Characteristics
Key Attributes
Model Number:
IRFR220NTRPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
5A
RDS(on):
560mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Input Capacitance(Ciss):
495pF
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
24pF
Mfr. Part #:
IRFR220NTRPBF(ES)
Package:
TO-252
Product Description
Product Overview
The IRFR220NTRPBF(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, ruggedness, avalanche rating, and low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Name: IRFR220NTRPBF(ES)
- Package: TO-252
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
- Origin: www.elecsuper.com
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Rating & Thermal Characteristics | ||||
| Drain-Source Voltage | BVDSS | 200 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TC=25°C) | ID | 5.0 | A | |
| Continuous Drain Current (TC=100°C) | ID | 3.0 | A | |
| Maximum Power Dissipation | PD | 35 | W | |
| Single Pulsed Avalanche Energy | EAS | 26.5 | mJ | a: Tj =25°C, VG=10V, VDD=50V, RG=25Ω, L=10mH, IAS=2.3A. |
| Pulsed Drain Current | IDM | 20 | A | |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Single Operation | ||||
| Junction-to-Case Thermal Resistance | RθJC | 3.6 | °C/W | Typical |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | uA | VDS=200V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 / 1.8 / 3.0 | V | VGS=VDS, ID=250uA (Min./Typ./Max.) |
| Drain-to-source On-resistance | RDS(on) | 466 / 560 | mΩ | VGS=10V, ID=3A (Typ./Max.) |
| Input Capacitance | CISS | 625 | pF | VGS=0V, f=1MHz, VDS=25V (Typ.) |
| Output Capacitance | COSS | 32 | pF | VGS=0V, f=1MHz, VDS=25V (Typ.) |
| Reverse Transfer Capacitance | CRSS | 23 | pF | VGS=0V, f=1MHz, VDS=25V (Typ.) |
| Total Gate Charge | QG(TOT) | 12 | nC | VGS=0 to 10V, VDS=200V, ID=1A (Typ.) |
| Gate-to-Source Charge | QGS | 2.5 | nC | VGS=0 to 10V, VDS=200V, ID=1A (Typ.) |
| Gate-to-Drain Charge | QGD | 2.8 | nC | VGS=0 to 10V, VDS=200V, ID=1A (Typ.) |
| Turn-On Delay Time | td(ON) | 10 | ns | VGS=10V, VDD=100V, ID=1A , RGEN=2.5Ω (Typ.) |
| Rise Time | tr | 12 | ns | VGS=10V, VDD=100V, ID=1A , RGEN=2.5Ω (Typ.) |
| Turn-Off Delay Time | td(OFF) | 15 | ns | VGS=10V, VDD=100V, ID=1A , RGEN=2.5Ω (Typ.) |
| Fall Time | tf | 15 | ns | VGS=10V, VDD=100V, ID=1A , RGEN=2.5Ω (Typ.) |
| Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A (Typ.) |
2507230935_ElecSuper-IRFR220NTRPBF-ES_C42434103.pdf
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