N Channel MOSFET ElecSuper ESEP4045GU PDFN5 6 8L 40V Low RDS ON for Charging Circuit and Power Switch
Key Attributes
Model Number:
ESEP4045GU
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
59A
RDS(on):
5.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
165pF@20V
Input Capacitance(Ciss):
2.4nF@20V
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ESEP4045GU
Package:
PDFN5x6-8L
Product Description
SuperMOS PDFN5*6-8L 40V N-channel MOSFET
The ESEP4045GU is an N-Channel enhancement mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESEP4045GU
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Lead Finish: Pb-free
Technical Specifications
| Parameter | Symbol | Limit/Typical Value | Unit | Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | BVDSS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 40.4 / 31.3 | A | TC=25°C / TC=75°C |
| Maximum Power Dissipation | PD | 20.83 | W | TC=25°C |
| Pulsed Drain Current | IDM | 161.6 | A | |
| Single Pulse Avalanche Current | IAS | 15 | A | |
| Single Pulse Avalanche Energy | EAS | 56 | mJ | Tj=25°C, VDD=20V, VGS=10V, L=0.5mH, Rg=25Ω |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Thermal Characteristics | ||||
| Junction-to-Case Thermal Resistance | RθJC | 6 | °C/W | Typical |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250µA |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=40V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 / 1.7 / 2.5 | V | VGS=VDS, ID=250µA |
| Drain-to-source On-resistance | RDS(on) | 5.5 / 7.7 | mΩ | VGS=10V, ID=30A / VGS=4.5V, ID=20A (Typ.) |
| Forward transconductance | gfs | 100 | S | VDS=5V, ID=30A (Typ.) |
| Capacitances and Gate Resistance | ||||
| Input Capacitance | CISS | 2400 | pF | VGS=0V, f=1MHz, VDS=20V |
| Output Capacitance | COSS | 190 | pF | VGS=0V, f=1MHz, VDS=20V |
| Reverse Transfer Capacitance | CRSS | 165 | pF | VGS=0V, f=1MHz, VDS=20V |
| Total Gate Charge | QG(TOT) | 45 | nC | VGS=10V, VDS=20V, ID=25A |
| Gate-to-Source Charge | QGS | 8.2 | nC | VGS=10V, VDS=20V, ID=25A |
| Gate-to-Drain Charge | QGD | 9.9 | nC | VGS=10V, VDS=20V, ID=25A |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(ON) | 12 | ns | VGS=10V, VDS=20V, ID=25A, RL=1.2Ω, RG=3Ω |
| Rise Time | tr | 15 | ns | VGS=10V, VDS=20V, ID=25A, RL=1.2Ω, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 52 | ns | VGS=10V, VDS=20V, ID=25A, RL=1.2Ω, RG=3Ω |
| Fall Time | tf | 103 | ns | VGS=10V, VDS=20V, ID=25A, RL=1.2Ω, RG=3Ω |
| Body Diode Characteristics | ||||
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=30A |
2504101957_ElecSuper-ESEP4045GU_C42420756.pdf
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