N channel MOSFET ElecSuper AON6312 ES with trench technology providing low RDS ON and power conversion
Key Attributes
Model Number:
AON6312-ES
Product Custom Attributes
Pd - Power Dissipation:
50W
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
123A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.7mΩ@10V;2.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
103pF
Number:
1 N-channel
Output Capacitance(Coss):
882pF
Input Capacitance(Ciss):
3.1nF
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
AON6312-ES
Package:
PDFN5x6-8L
Product Description
Product Overview
The AON6312-ES is an N-channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and designed for high-density cell applications, ensuring low RDS(on) and reliability.
Product Attributes
- Brand: ElecSuper
- Model: AON6312-ES
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 30 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TC=25℃ | - | - | 123 | A |
| Continuous Drain Current | ID | TC=75℃ | - | - | 95 | A |
| Maximum Power Dissipation | PD | TC=25℃ | - | - | 50 | W |
| Maximum Power Dissipation | PD | TC=75℃ | - | - | 30 | W |
| Pulsed Drain Current | IDM | - | - | - | 260 | A |
| Avalanche Current, Single Pulsed | IAS | a | - | - | 38 | A |
| Avalanche Energy, Single Pulsed | EAS | a | - | - | 216 | mJ |
| Operating Junction Temperature | TJ | - | - | - | 150 | ℃ |
| Storage Temperature Range | Tstg | - | -55 | - | +150 | ℃ |
| Junction-to-Case Thermal Resistance | RΘJC | t ≤ 10 s | - | - | 2.5 | ℃/W |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=30V | - | 1 | - | uA |
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.1 | 1.75 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | - | 1.7 | 2.2 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | - | 2.6 | 3.6 | mΩ |
| Input Capacitance | CISS | VGS=0V, VDS =15V f=1MHz | - | 3100 | - | pF |
| Output Capacitance | COSS | - | - | 882 | - | pF |
| Reverse Transfer Capacitance | CRSS | - | - | 103 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=20A | - | 43 | - | nC |
| Gate-to-Source Charge | QGS | - | - | 8.5 | - | nC |
| Gate-to-Drain Charge | QGD | - | - | 6 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | - | 11.5 | - | ns |
| Rise Time | tr | - | - | 5.2 | - | ns |
| Turn-Off Delay Time | td(OFF) | - | - | 40 | - | ns |
| Fall Time | tf | - | - | 8 | - | ns |
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=20A | - | - | 1.5 | V |
2504101957_ElecSuper-AON6312-ES_C19725102.pdf
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