N channel MOSFET ElecSuper ESJG150N03A with trench technology and 100 percent UIS tested reliability
Key Attributes
Model Number:
ESJG150N03A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
123A
RDS(on):
1.7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Reverse Transfer Capacitance (Crss@Vds):
103pF@15V
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
3.1nF@15V
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
ESJG150N03A
Package:
PDFN5x6-8L
Product Description
Product Overview
The ESJG150N03A is an N-channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESJG150N03A
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 123 | A | ||
| Continuous Drain Current | ID | TC=75C | 95 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 50 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 30 | W | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 38 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 216 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | t ≤ 10 s | 2.5 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=30V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.1 | 1.75 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.7 | 2.2 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 2.6 | 3.6 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =15V f=1MHz | 3100 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =15V f=1MHz | 882 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =15V f=1MHz | 103 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V ID=20A | 43 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V ID=20A | 8.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V ID=20A | 6 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 11.5 | ns | ||
| Rise Time | tr | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 5.2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 40 | ns | ||
| Fall Time | tf | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 8 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=20A | 1.5 | V | ||
2504101957_ElecSuper-ESJG150N03A_C42420879.pdf
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