Power Switch N Channel MOSFET ElecSuper ESE01P18K Featuring Low Gate Charge and High Current Rating
Key Attributes
Model Number:
ESE01P18K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9A
RDS(on):
100mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Input Capacitance(Ciss):
610pF@25V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ESE01P18K
Package:
TO-252
Product Description
Product Overview
The ESE01P18K is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | Typical | Maximum |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 9 | A | TC=25°C | ||
| Continuous Drain Current | ID | 7 | A | TC=75°C | ||
| Maximum Power Dissipation | PD | 20 | W | TC=25°C | ||
| Pulsed Drain Current | IDM | 36 | A | |||
| Avalanche Current Single Pulsed | IAS | 4.5 | A | Note a | ||
| Avalanche energy Single Pulsed | EAS | 5 | mJ | Note a | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 to 150 | °C | |||
| Thermal Resistance | ||||||
| Junction-to-Case Thermal Resistance | RθJC | °C/W | Single Operation t ≤ 10 s | 6.3 | ||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | ||
| Zero Gate Voltage Drain Current | IDSS | uA | VDS=100V, VGS=0V | 1.0 | ||
| Gate-to-source Leakage Current | IGSS | nA | VDS=0V, VGS=±20V | ±100 | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | V | VGS=VDS, ID=250uA | 1.0 | 2.5 | |
| Drain-to-source On-resistance | RDS(on) | mΩ | VGS=10V, ID=5A | 100 | 115 | |
| Drain-to-source On-resistance | RDS(on) | mΩ | VGS=4.5V, ID=3A | 110 | 140 | |
| Forward Transconductance | gFS | S | VDS=5.0V, ID=5A | 40 | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | pF | VGS=0V, f=1MHz, VDS=25V | 610 | ||
| Output Capacitance | COSS | pF | VGS=0V, f=1MHz, VDS=25V | 40 | ||
| Reverse Transfer Capacitance | CRSS | pF | VGS=0V, f=1MHz, VDS=25V | 25 | ||
| Total Gate Charge | QG(TOT) | nC | VGS=10V, VDS=30V, ID=5A | 14 | ||
| Gate-to-Source Charge | QGS | nC | VGS=10V, VDS=30V, ID=5A | 2.3 | ||
| Gate-to-Drain Charge | QGD | nC | VGS=10V, VDS=30V, ID=5A | 2.8 | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3Ω | 8 | ||
| Rise Time | tr | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3Ω | 5.5 | ||
| Turn-Off Delay Time | td(OFF) | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3Ω | 15.8 | ||
| Fall Time | tf | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3Ω | 6.9 | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | V | VGS=0V, IS=1A | 0.45 | 1.2 | |
2504101957_ElecSuper-ESE01P18K_C42420846.pdf
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