DC DC conversion component ElecSuper ESN6435 SuperMOS P channel MOSFET with excellent RDS ON performance
Key Attributes
Model Number:
ESN6435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
146pF
Number:
1 P-Channel
Output Capacitance(Coss):
172pF
Input Capacitance(Ciss):
900pF
Pd - Power Dissipation:
14.7W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
ESN6435
Package:
PDFN5x6-8L
Product Description
SuperMOS PDFN5*6-8L-30V 11.5m RDS(ON), P-channel MOSFET
The ESN6435 utilizes advanced trench technology MOSFETs to deliver excellent RDS(ON) and low gate charge. This device is well-suited for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design for low RDS(on), and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESN6435
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1 | -1.6 | -2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 11.5 | 15 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-8A | 19.5 | 25.5 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 900 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 172 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 146 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID=-5A | 22 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID=-5A | 3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID=-5A | 6 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V ID=-5A, RG=2.5 | 10 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V ID=-5A, RG=2.5 | 14 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V ID=-5A, RG=2.5 | 50 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V ID=-5A, RG=2.5 | 20 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-10A | -1.2 | V | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | -24 | A | ||
| Continuous Drain Current | ID | TC=100C | -14.4 | A | ||
| Maximum Power Dissipation | PD | 14.7 | W | |||
| Pulsed Drain Current | IDM | -96 | A | |||
| Single Pulse Avalanche Current | IAS | -12.5 | A | |||
| Single Pulse Avalanche Energy | EAS | 39 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| THERMAL CHARACTERISTICS | ||||||
| Junction-to-Case Thermal Resistance | RJC | 8.5 | /W | |||
2504101957_ElecSuper-ESN6435_C5224306.pdf
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