ElecSuper AON6484 ES N Channel Enhancement Mode MOSFET Featuring Low Gate Charge and DC DC Conversion
Key Attributes
Model Number:
AON6484(ES)
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
11A
RDS(on):
91mΩ@10V;97mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
58pF
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
780pF
Gate Charge(Qg):
19.2nC@4.5V
Mfr. Part #:
AON6484(ES)
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The AON6484(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is 100% UIS tested and features a high-density cell design for low on-resistance, reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Part Number: AON6484(ES)
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 11 | A | TC=25°C |
| Continuous Drain Current | ID | 9 | A | TC=75°C |
| Maximum Power Dissipation | PD | 25 | W | TC=25°C |
| Maximum Power Dissipation | PD | 15 | W | TC=75°C |
| Pulsed Drain Current | IDM | 44 | A | a |
| Avalanche Current, Single Pulsed | IAS | 12.5 | A | b |
| Avalanche Energy, Single Pulsed | EAS | 23.4 | mJ | b |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | 25 | ° C/W | t ≤ 10 s |
| Junction-to-Case Thermal Resistance | RθJC | 5 | ° C/W | c, Steady State |
| Gate Threshold Voltage | VGS(TH) | 1.8 | V | VGS=VDS, ID=250uA (Typical) |
| Drain-to-source On-resistance | RDS(on) | 91 | mΩ | VGS=10V, ID=7.5A (Typical) |
| Drain-to-source On-resistance | RDS(on) | 97 | mΩ | VGS=4.5V, ID=5A (Typical) |
| Forward Transconductance | gFS | 40 | S | VDS=5.0V, ID=7.5A (Typical) |
| Input Capacitance | CISS | 780 | pF | VGS=0V, f=1MHz, VDS=50V (Typical) |
| Output Capacitance | COSS | 58 | pF | VGS=0V, f=1MHz, VDS=50V (Typical) |
| Reverse Transfer Capacitance | CRSS | 26 | pF | VGS=0V, f=1MHz, VDS=50V (Typical) |
| Total Gate Charge | QG(TOT) | 19.2 | nC | VGS=4.5V, VDS=50V, ID=7.5A (Typical) |
| Gate-to-Source Charge | QGS | 3.5 | nC | VGS=4.5V, VDS=50V, ID=7.5A (Typical) |
| Gate-to-Drain Charge | QGD | 5.3 | nC | VGS=4.5V, VDS=50V, ID=7.5A (Typical) |
| Turn-On Delay Time | td(ON) | 6 | ns | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω (Typical) |
| Rise Time | tr | 2.6 | ns | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω (Typical) |
| Turn-Off Delay Time | td(OFF) | 22 | ns | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω (Typical) |
| Fall Time | tf | 2.5 | ns | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω (Typical) |
| Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A (Maximum) |
2504101957_ElecSuper-AON6484-ES_C42412245.pdf
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