p channel mosfet ElecSuper IRF4905STRLPBF ES ideal for dc dc conversion and charging applications
Key Attributes
Model Number:
IRF4905STRLPBF-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
48.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@10V;14.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 P-Channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
7.8nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
IRF4905STRLPBF-ES
Package:
TO-252
Product Description
Product Overview
The IRF4905STRLPBF-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for DC-DC conversion, power switching, and charging circuits, offering a high-density cell design, a reliable and rugged construction, and avalanche rating. This standard product is Pb-free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | BVDSS | -60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TC=25°C) | ID | -48.7 | A | |
| Continuous Drain Current (TC=100°C) | ID | -30.8 | A | |
| Total Power Dissipation (TC=25°C) | PD | 62.5 | W | |
| Pulsed Drain Current | IDM | -194.8 | A | |
| Avalanche Current, Single Pulsed (L=0.5mH) | IAS | -34 | A | |
| Avalanche Energy, Single Pulsed | EAS | 263.5 | mJ | a: EAS conditionTj=25°C, VDD=-30V, VGS=-10V, L=0.5mH, RG=25ohm. |
| Operating Junction Temperature | TJ | -55 to 150 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 2 | °C/W | Single Operation |
| Drain-to-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA |
| Zero Gate Voltage Drain Current | IDSS | -100 | nA | VGS=0V, VDS=-60V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -2.4 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance (VGS=-10V, ID=-20A) | RDS(on) | 11.5 to 15.5 | mΩ | Typ. |
| Drain-to-source On-resistance (VGS=-4.5V, ID=-15A) | RDS(on) | 14.3 to 19.5 | mΩ | Typ. |
| Input Capacitance | CISS | 7800 | pF | VGS=0V, VDS =-30V, f=1MHz |
| Output Capacitance | COSS | 300 | pF | VGS=0V, VDS =-30V, f=1MHz |
| Reverse Transfer Capacitance | CRSS | 270 | pF | VGS=0V, VDS =-30V, f=1MHz |
| Total Gate Charge | QG(TOT) | 45 | nC | VGS=-10V, VDS=-30V, ID =-20A |
| Gate-to-Source Charge | QGS | 8 | nC | VGS=-10V, VDS=-30V, ID =-20A |
| Gate-to-Drain Charge | QGD | 11 | nC | VGS=-10V, VDS=-30V, ID =-20A |
| Turn-On Delay Time | td(ON) | 11 | ns | VGS=-10V, VDS=-30V, ID=-20A, RG=3Ω |
| Rise Time | tr | 79 | ns | VGS=-10V, VDS=-30V, ID=-20A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 33 | ns | VGS=-10V, VDS=-30V, ID=-20A, RG=3Ω |
| Fall Time | tf | 107 | ns | VGS=-10V, VDS=-30V, ID=-20A, RG=3Ω |
| Forward Voltage (ISD=-20A) | VSD | -1.2 | V | VGS=0V |
2504101957_ElecSuper-IRF4905STRLPBF-ES_C39832215.pdf
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