Low Gate Charge MOSFET ElecSuper ESEP1520K Ideal for Power Switch and Charging Circuit Applications
Key Attributes
Model Number:
ESEP1520K
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
19A
RDS(on):
57mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF@75V
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
675pF@75V
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
ESEP1520K
Package:
TO-252
Product Description
Product Overview
The ESEP1520K is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: ESEP1520K
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 19 | A | ||
| Continuous Drain Current | ID | TC=75°C | 14 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 62.5 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 37.5 | W | ||
| Pulsed Drain Current | IDM | a | 45 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 15.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 36 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 20 | °°C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | c, Steady State | 2.0 | °°C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=150V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.0 | 3.0 | 5.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5A | 57 | 69 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=6V, ID=3A | 75 | 100 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =75V | 675 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =75V | 78 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =75V | 4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=75V, ID=5A | 11.5 | 20 | nC | |
| Gate-to-Source Charge | QGS | VGS=10V, VDS=75V, ID=5A | 2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=75V, ID=5A | 2.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=75V, RL=15Ω, RG=3Ω | 6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=75V, RL=15Ω, RG=3Ω | 3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=75V, RL=15Ω, RG=3Ω | 20 | ns | ||
| Fall Time | tf | VGS=10V, VDS=75V, RL=15Ω, RG=3Ω | 5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 1.5 | V | ||
2504101957_ElecSuper-ESEP1520K_C42420777.pdf
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