power switch solution ElecSuper SI2301DS-ES P Channel MOSFET with low gate charge and fast switching
Key Attributes
Model Number:
SI2301DS-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
3.3nC@2.5V
Mfr. Part #:
SI2301DS-ES
Package:
SOT-23
Product Description
Product Overview
The SI2301DS-ES is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design, and a reliable, rugged construction. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | TA=25°C | 2.3 | A | ||
| TA=75°C | 1.7 | A | ||||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| TA=75°C | 0.84 | W | ||||
| Pulsed Drain Current | IDM | 9.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 90 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±8V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.7 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2.3A | 90 | 112 | mΩ | |
| VGS=-2.5V, ID=-2A | 110 | 142 | mΩ | |||
| Forward trans conductance | gfs | VDS=-5V, ID=-2.3A | 6.5 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-10V, f=1MHz | 405 | pF | ||
| Output Capacitance | COSS | 75 | pF | |||
| Reverse Transfer Capacitance | CRSS | 55 | pF | |||
| Gate Resistance | Rg | f=1MHz | 6 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-2.5V, VDS=-10V, ID=-2.3A | 3.3 | 6 | nC | |
| Gate-to-Source Charge | QGS | 0.7 | nC | |||
| Gate-to-Drain Charge | QGD | 1.3 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=10V, RL=10Ω,ID=-1A, RG=1Ω | 11 | 20 | ns | |
| Rise Time | tr | 35 | 60 | ns | ||
| Turn-Off Delay Time | td(OFF) | 30 | 50 | ns | ||
| Fall Time | tf | 10 | 20 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.8 | -1.5 | V | |
2504101957_ElecSuper-SI2301DS-ES_C5224173.pdf
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