ElecSuper IRFR3607TRPBF ES N Channel MOSFET with High Density Cell Design and Pb Free Construction
Key Attributes
Model Number:
IRFR3607TRPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
RDS(on):
9.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
225pF
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
3.96nF
Pd - Power Dissipation:
116W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
IRFR3607TRPBF(ES)
Package:
TO-252
Product Description
Product Overview
The IRFR3607TRPBF(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), halogen-free material, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Model: IRFR3607TRPBF(ES)
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Pb-free: Yes
- UIS Tested: 100%
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 68 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 80 | A | ||
| Continuous Drain Current | ID | TC=100°C | 52 | A | ||
| Maximum Power Dissipation | PD | 116 | W | |||
| Pulsed Drain Current | IDM | 320 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 25 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 156 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 1.08 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 68 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=68V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.0 | 2.8 | 4.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=30A | 7.3 | 9.5 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3960 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 260 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 225 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=20A | 35 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=30V, ID=20A | 11 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=30V, ID=20A | 9 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=20A, RG=6Ω | 15 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=20A, RG=6Ω | 94 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=20A, RG=6Ω | 46 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=20A, RG=6Ω | 32 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2504101957_ElecSuper-IRFR3607TRPBF-ES_C42434113.pdf
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