Low RDS ON P Channel MOSFET ElecSuper SSM3J328R LF ES with avalanche rating and fast switching speed
Key Attributes
Model Number:
SSM3J328R,LF(ES)
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
16.5mΩ@4.5V;23mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
620mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
165pF
Output Capacitance(Coss):
185pF
Input Capacitance(Ciss):
1.312nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15.3nC@4.5V
Mfr. Part #:
SSM3J328R,LF(ES)
Package:
SOT-23
Product Description
Product Overview
The SSM3J328R,LF(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Package: SOT-23
- Marking: 2305B
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-20V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 16.5 | 21.5 | m | |
| VGS=-2.5V, ID=-5A | 23 | 30 | m | |||
| CHARGES AND CAPACITANCES | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 1312 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-10V f=1MHz | 185 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-10V f=1MHz | 165 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V ID=-3A | 15.3 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V ID=-3A | 2.2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V ID=-3A | 4.5 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDD=-10V ID=-7A, RG=2.5 | 10 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDD=-10V ID=-7A, RG=2.5 | 30 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDD=-10V ID=-7A, RG=2.5 | 28 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDD=-10V ID=-7A, RG=2.5 | 8 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-7A | -1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -7 | A | ||
| TA=100C | -5 | A | ||||
| Maximum Power Dissipation | PD | 2 | W | |||
| Pulsed Drain Current | IDM | -28 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 62.5 | C/W | ||
2507091655_ElecSuper-SSM3J328R-LF-ES_C49108745.pdf
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