Power Switching N Channel MOSFET ElecSuper NTMFS5C670NLT1G ES with Low RDS ON and Avalanche Rating
Key Attributes
Model Number:
NTMFS5C670NLT1G(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
245pF
Input Capacitance(Ciss):
4.765nF
Output Capacitance(Coss):
277pF
Pd - Power Dissipation:
65.7W
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
NTMFS5C670NLT1G(ES)
Package:
PDFN5x6-8L
Product Description
Product Overview
The NTMFS5C670NLT1G(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 80 | A | ||
| Continuous Drain Current | ID | TC=100°C | 48 | A | ||
| Maximum Power Dissipation | PD | 65.7 | W | |||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulsed Avalanche Current | IAS | Note 1 | 26.5 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note 1 | 175 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 1.9 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 4.6 | 6 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 5.4 | 7 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 4765 | pF | ||
| Output Capacitance | COSS | 277 | pF | |||
| Reverse Transfer Capacitance | CRSS | 245 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=10A | 98 | nC | ||
| Gate-to-Source Charge | QGS | 12.5 | nC | |||
| Gate-to-Drain Charge | QGD | 32 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=15A, RG=1.8Ω | 9 | ns | ||
| Rise Time | tr | 6.1 | ns | |||
| Turn-Off Delay Time | td(OFF) | 33.2 | ns | |||
| Fall Time | tf | 7.5 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.2 | V | ||
2504101957_ElecSuper-NTMFS5C670NLT1G-ES_C42434112.pdf
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